Single Bipolar Transistors 2PB710AS,115 product image

2PB710AS,115

  • Description:TRANS PNP 50V 0.5A SMT3 MPAK
  • Series:-

SKU:a84ccb08a25f Category: Brand:

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2PB710AS,115 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is TRANS PNP 50V 0.5A SMT3 MPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2PB710AS,115

  • Description:TRANS PNP 50V 0.5A SMT3 MPAK
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max):10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:170 @ 150mA, 10V
  • Power - Max:250 mW
  • Frequency - Transition:140MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SMT3; MPAK
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2PB710AS,115

2PB710AS,115

Single Bipolar Transistors Overview

The 2PB710AS,115 is a PNP general-purpose transistor housed in an SC-59 (SOT346) plastic surface-mount package. It features a maximum collector-emitter voltage of -50 V and a continuous DC collector current rating of -500 mA. The device offers a high DC current gain range of 170 to 340 at -150 mA. Its transition frequency is specified at 140 MHz, with a total power dissipation capability of 250 mW at 25 °C ambient temperature.

Single Bipolar Transistors Feature Summary

  • High current handling capability up to 500 mA for robust switching applications
  • Low voltage operation rated at 50 V collector-emitter breakdown
  • High DC current gain ensuring efficient amplification performance
  • Compact SMT packaging suitable for space-constrained designs

Single Bipolar Transistors Applications

  • General purpose switching circuits
  • Signal amplification stages
  • Driver circuits for low-power loads

Single Bipolar Transistors Procurement Notes

Verify the component origin carefully as the NXP Standard Product business was transferred to Nexperia. Ensure the datasheet references align with the correct manufacturer entity. Confirm that the ordering suffix matches the specific gain bin required for your design specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate voltage ratings and high current gain is required. The SC-59 package is ideal for compact PCB layouts. Compare the hFE bin against circuit requirements to ensure adequate drive capability. Consider thermal constraints if operating near the maximum power dissipation limit.

Single Bipolar Transistors Part Context

This device belongs to the 2PB710A series of PNP transistors designed for general-purpose use. It serves as the complement to the 2PD602A NPN transistor. The series is engineered for reliable performance in consumer and industrial electronics requiring small form factor discrete semiconductors.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other PNP transistors in the SOT346 package with matching voltage and current ratings. Verify pinout compatibility and thermal resistance characteristics. Cross-reference gain bins to ensure equivalent amplification performance in the target application.

2PB710AS,1152PB710AS,115

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