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2PC1815GR,116 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is TRANS NPN 50V 0.15A TO-92-3. Review the specifications below when checking this part for your BOM.
The 2PC1815GR,116 is an NPN general-purpose transistor housed in a TO-92 (SOT54) plastic package. It supports a maximum collector-emitter voltage of 50 V and a continuous DC collector current of 150 mA. The GR suffix indicates a specific gain bin with a minimum DC current gain (hFE) of 200 at IC = 2 mA. Key electrical characteristics include a transition frequency of 80 MHz, a collector capacitance of 3.5 pF, and a total power dissipation of 500 mW at 25 °C.
Verify the ordering suffix matches the required gain bin specification. Confirm the manufacturer origin as Philips Semiconductors or successor entities. Ensure the component status aligns with long-term availability requirements. Cross-reference the datasheet revision date against design specifications to confirm parameter validity.
Select this variant when a high DC current gain is required for low-level signal amplification. The TO-92 package is appropriate for through-hole assembly processes. Compare the hFE range against circuit biasing requirements to ensure adequate drive capability. Consider thermal resistance limits when designing for ambient temperatures exceeding 25 °C.
This component belongs to the 2PC1815 family of NPN transistors. The base part number defines the core electrical ratings and physical package. Suffixes such as GR, Y, BL, and others denote specific bins of DC current gain (hFE). The PNP complement for this family is the 2PA1015.
Direct substitutes within the same gain bin are limited. Verify pinout compatibility with the original TO-92 layout. Check that replacement devices meet the 50 V VCEO and 150 mA IC limits. Consult official cross-reference lists for approved equivalents.
The GR suffix specifies a higher minimum DC current gain (hFE) of 200 at IC = 2 mA, whereas the Y variant has a minimum gain of 120 under the same conditions.
No. With a transition frequency (fT) of 80 MHz, it is intended for general-purpose and audio frequency applications, not high-frequency RF circuits.
The total power dissipation is rated at 500 mW when the ambient temperature is 25 °C and the device is mounted on an FR4 printed-circuit board.
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