2PD2150,115

Single Bipolar Transistors Overview

The Nexperia 2PD2150,115 is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor housed in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device plastic package. It features a collector-emitter voltage (VCEO) of 20 V and a continuous collector current (IC) of 3 A. The peak collector current (ICM) reaches 5 A for single pulses up to 1 ms. The collector-emitter saturation voltage (VCEsat) is typically 0.2 V at IC = 2 A and IB = 0.1 A. DC current gain (hFE) ranges from 180 to 390 at IC = 0.1 A. The transition frequency (fT) is typically 220 MHz. Total power dissipation is 0.5 W on FR4 PCBs and 2 W on ceramic Al2O3 PCBs at Tamb ≤ 25 °C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for improved efficiency
• High collector current capability with high gain at elevated currents
• Reduced heat generation compared to conventional transistors
• Smaller required Printed-Circuit Board area than standard packages

Single Bipolar Transistors Applications

• DC-to-DC conversion
• MOSFET gate driving
• Motor control
• Charging circuits
• Power switches such as motors and fans

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage and high current handling are critical within a compact footprint. The SOT89 package offers a thermal pad for effective heat transfer, making it suitable for applications requiring higher power dissipation than standard small-signal packages. Ensure the design accounts for the 20 V collector-emitter voltage limit and the thermal resistance characteristics on the chosen PCB material.

Single Bipolar Transistors Part Context

This device belongs to Nexperia's BISS transistor portfolio, designed to replace conventional bipolar junction transistors where space and thermal management are constraints. The PNP complement is the 2PB1424. The marking code for the device is M2. It is manufactured using silicon technology and is intended for surface-mount assembly via reflow soldering.

Single Bipolar Transistors Replacement Considerations

The official PNP complement is the 2PB1424. No other direct substitute part numbers are documented in the provided datasheet.

Single Bipolar Transistors FAQ

What is the maximum peak collector current?

The peak collector current (ICM) is 5 A for a single pulse with a duration of tp ≤ 1 ms.

How does the package affect thermal performance?

The SOT89 package includes a collector pad for good heat transfer. Total power dissipation is 0.5 W on FR4 PCBs and 2 W on ceramic Al2O3 PCBs at an ambient temperature of 25 °C or lower.

What is the typical DC current gain range?

The DC current gain (hFE) has a minimum value of 180 and a maximum of 390 when measured at a collector current of 0.1 A and a collector-emitter voltage of 2 V.