Single Bipolar Transistors 2PD601AQW,115 product image

2PD601AQW,115

  • Description:TRANS NPN 50V 0.1A SC-70
  • Series:-

SKU:04268a2fac45 Category: Brand:

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2PD601AQW,115 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is TRANS NPN 50V 0.1A SC-70. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2PD601AQW,115

  • Description:TRANS NPN 50V 0.1A SC-70
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 2mA, 10V
  • Power - Max:200 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2PD601AQW,115

2PD601AQW,115

Single Bipolar Transistors Overview

The 2PD601AQW,115 is an NPN general-purpose transistor from the 2PD601A series manufactured by Nexperia. It operates with a collector-emitter voltage of 50 V and a DC collector current of 100 mA. The device features a Q gain group with hFE ranging from 160 to 260 at IC=2mA, VCE=10V. It is housed in a SOT323 (SC-70) plastic surface-mounted package with three leads. Key electrical limits include a collector-base voltage of 60 V, emitter-base voltage of 6 V, and peak collector current of 200 mA. Total power dissipation is rated at 200 mW at Tamb ≤ 25 °C.

Single Bipolar Transistors Feature Summary

  • Available in multiple DC current gain versions for flexible circuit design
  • Low collector-emitter saturation voltage for efficient switching
  • High transition frequency suitable for signal amplification

Single Bipolar Transistors Applications

  • General purpose switching
  • Amplification circuits

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix matches the required gain group and packaging format. Confirm the manufacturer designation aligns with current Nexperia product data sheets rather than legacy NXP documentation. Ensure the component status is active before finalizing procurement plans. Cross-reference the specific part number against official distributor catalogs to confirm availability and authenticity.

Single Bipolar Transistors Selection Notes

Select this component when a small SOT323 package is required for NPN switching or amplification tasks. Choose the Q gain variant specifically if the application requires a minimum hFE of 160. Consider the thermal resistance characteristics for heat dissipation requirements in confined spaces. Verify that the 50 V rating meets the maximum operating voltage of the target circuit.

Single Bipolar Transistors Part Context

This transistor belongs to the 2PD601A series of NPN general-purpose devices. The series includes variants in SOT346 and SOT323 packages with different gain groups (Q, R, S). The AQW suffix denotes the SOT323 package with the Q gain binning. This family is designed for low-power applications requiring reliable performance in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same series include 2PD601ARW and 2PD601ASW for different gain requirements. Other NPN transistors in the SC-70 package with similar 50V/100mA ratings may serve as functional replacements if pin compatibility and electrical parameters are verified.

2PD601AQW,1152PD601AQW,115

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