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2SA1013-O,T6MIBF(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 160V 1A TO-92L. Review the specifications below when checking this part for your BOM.
The Toshiba Semiconductor and Storage 2SA1013-O,T6MIBF(J) is a silicon PNP epitaxial transistor manufactured using the PCT process. It features a collector-emitter voltage (VCEO) of -160 V, a continuous collector current (IC) rating of -1 A, and a collector power dissipation (PC) of 900 mW at 25°C ambient temperature. The device operates within a junction temperature range up to 150°C and utilizes a JEDEC TO-92MOD package.
Verify the specific ordering suffix against official documentation to confirm exact packaging, marking codes, and lead-free status. Confirm RoHS compliance directly with the manufacturer or authorized distributor as stated in the product specifications. Ensure the component meets all absolute maximum ratings for your specific operating conditions.
Select this component when designing circuits requiring high voltage handling and substantial continuous current capacity. Consider its complementary relationship with the 2SC2383 for push-pull configurations. Evaluate thermal management requirements carefully, as the device supports a junction temperature up to 150°C but requires derating under heavy loads.
This component belongs to the 2SA1013 series of silicon PNP transistors designed by Toshiba Semiconductor. These devices are engineered specifically for robust performance in television sets and general-purpose power switching environments. The series is characterized by its high voltage tolerance and reliable operation in line-operated consumer electronics.
The datasheet explicitly identifies the 2SC2383 as the complementary part for this transistor. Verify pinout compatibility and electrical parameters before substituting with other generic PNP transistors.
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