Single Bipolar Transistors 2SA1013-O,T6MIBF(J product image

2SA1013-O,T6MIBF(J

  • Description:TRANS PNP 160V 1A TO-92L
  • Series:-

SKU:90d9f74067c9 Category: Brand:

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2SA1013-O,T6MIBF(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 160V 1A TO-92L. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1013-O,T6MIBF(J

  • Description:TRANS PNP 160V 1A TO-92L
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):160 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 200mA, 5V
  • Power - Max:900 mW
  • Frequency - Transition:50MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92L
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1013-O,T6MIBF(J

2SA1013-O,T6MIBF(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1013-O,T6MIBF(J) is a silicon PNP epitaxial transistor manufactured using the PCT process. It features a collector-emitter voltage (VCEO) of -160 V, a continuous collector current (IC) rating of -1 A, and a collector power dissipation (PC) of 900 mW at 25°C ambient temperature. The device operates within a junction temperature range up to 150°C and utilizes a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

  • High voltage capability with a collector-emitter breakdown voltage of -160 V
  • Large continuous collector current capability for demanding switching applications
  • Complementary pairing with the 2SC2383 NPN transistor

Single Bipolar Transistors Applications

  • Color TV vertical deflection output circuits
  • Line-operated TV sound output applications
  • General power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging, marking codes, and lead-free status. Confirm RoHS compliance directly with the manufacturer or authorized distributor as stated in the product specifications. Ensure the component meets all absolute maximum ratings for your specific operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage handling and substantial continuous current capacity. Consider its complementary relationship with the 2SC2383 for push-pull configurations. Evaluate thermal management requirements carefully, as the device supports a junction temperature up to 150°C but requires derating under heavy loads.

Single Bipolar Transistors Part Context

This component belongs to the 2SA1013 series of silicon PNP transistors designed by Toshiba Semiconductor. These devices are engineered specifically for robust performance in television sets and general-purpose power switching environments. The series is characterized by its high voltage tolerance and reliable operation in line-operated consumer electronics.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC2383 as the complementary part for this transistor. Verify pinout compatibility and electrical parameters before substituting with other generic PNP transistors.

2SA1013-O,T6MIBF(J2SA1013-O,T6MIBF(J

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