2SA1015-Y-BP

Single Bipolar Transistors Overview

The MCC 2SA1015-Y-BP is a PNP silicon epitaxial planar transistor in a TO-92 plastic package. It features a collector-emitter breakdown voltage of -50V and a maximum collector current of -0.15A. The device dissipates 0.4W at 25°C with an operating junction temperature range from -55°C to +125°C. The 'Y' suffix indicates a DC current gain (hFE) classification of 120 to 240 at IC=-2.0mA and VCE=-6.0V. Electrical characteristics include a collector-base breakdown voltage of -50V, a transition frequency of 80MHz, and a noise figure of 6.0dB.

Single Bipolar Transistors Feature Summary

• PNP epitaxial construction designed for audio frequency general-purpose amplification and driver stage applications.
• Low noise performance suitable for sensitive signal processing circuits.
• Epoxy encapsulation meets UL 94 V-0 flammability rating.

Single Bipolar Transistors Applications

• Audio frequency general-purpose amplifier stages
• Driver stage amplifiers
• Low noise amplifier applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Micro Commercial Components documentation to confirm exact binning and packaging specifications. Confirm compliance status through authorized distributors or direct manufacturer channels to ensure genuine parts with full traceability. Review the latest datasheet revision for any updates to electrical limits or mechanical dimensions before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -50V collector-emitter breakdown voltage and -0.15A continuous current capability is required. The Y-bin hFE range of 120 to 240 provides moderate gain consistency for linear amplification tasks. Ensure the application operates within the specified -55°C to +125°C junction temperature range and respects the 0.4W power dissipation limit.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1015 series of PNP silicon transistors manufactured by Micro Commercial Components. The series includes variants distinguished by hFE gain bins such as O, Y, and GR. These devices are commonly utilized in consumer electronics and audio equipment requiring low-power amplification and switching functions within standard through-hole mounting configurations.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for verified substitutes. Generic replacements must match the PNP configuration, -50V V(BR)CEO, -0.15A IC, and TO-92 package constraints.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SA1015-Y variant?

The DC current gain (hFE) for the 2SA1015-Y variant ranges from 120 to 240, measured at IC=-2.0mAdc and VCE=-6.0Vdc.

Does the 2SA1015-Y-BP meet UL flammability standards?

Yes, the epoxy used in the plastic encapsulation meets the UL 94 V-0 flammability rating.

What is the maximum power dissipation of this transistor?

The device is capable of 0.4 Watts of power dissipation at an ambient temperature of 25°C.