2SA1020-Y(6MBH1,AF

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1020-Y(6MBH1,AF) is a PNP silicon epitaxial transistor utilizing the PCT process. It features a maximum collector current of -2 A and a collector-emitter breakdown voltage of -50 V. The device supports a collector power dissipation of 900 mW with a junction temperature rating up to 150 °C. Electrical characteristics include a DC current gain (hFE) ranging from 70 to 240 at -0.5 A, a transition frequency of 100 MHz, and a storage time of 1.0 μs. The component is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Low collector saturation voltage of -0.5 V maximum at -1 A collector current
• High-speed switching capability with a typical storage time of 1.0 μs
• High collector power dissipation rated at 900 mW
• Complementary pairing available with the 2SC2655 NPN transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the specific tape-and-reel or bulk packaging requirements for your assembly line. Confirm RoHS compliance status directly with the manufacturer, as environmental declarations may vary by production lot. Ensure the hFE binning code corresponds to the required gain range for your circuit design before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when high current handling near 2 A is required alongside moderate voltage ratings of 50 V. The low saturation voltage makes it suitable for efficient switching loads. Verify thermal management capabilities, as the 900 mW dissipation limit requires adequate heat sinking or derating at elevated ambient temperatures above 25 °C.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of general-purpose PNP transistors manufactured by Toshiba Semiconductor and Storage. The series is designed for audio frequency amplification and switching tasks. The specific model utilizes a plastic-encapsulated TO-92MOD form factor, distinguishing it from higher-power flange-mounted variants within the broader product family.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC2655 as the complementary NPN counterpart. Direct pin-compatible replacements from other manufacturers should be evaluated against the absolute maximum ratings and hFE linearity specifications to ensure circuit stability.

Single Bipolar Transistors FAQ

What is the minimum DC current gain (hFE) specified for the Y grade?

The Y grade indicates an hFE range of 120 to 240 when tested at a collector current of -0.5 A and VCE of -2 V.

How does the collector-emitter saturation voltage behave under load?

The maximum collector-emitter saturation voltage is -0.5 V when the collector current is -1 A and the base current is -0.05 A.

Is this component intended for aerospace or medical applications?

No. Toshiba explicitly restricts this product from Unintended Use, which includes aerospace, medical equipment, and nuclear facilities.