2SA1020-Y,F(J

Single Bipolar Transistors Overview

The Toshiba 2SA1020-Y,F(J is a silicon PNP epitaxial transistor utilizing the PCT process. It features a maximum collector current of 2 A and a collector-emitter voltage rating of -50 V. The device provides a collector power dissipation of 900 mW at 25°C ambient temperature. Electrical characteristics include a DC current gain (hFE) ranging from 70 to 240 at IC = -0.5 A, and a transition frequency of 100 MHz. Switching performance includes a typical storage time of 1.0 μs. The component is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Low collector saturation voltage of -0.5 V maximum at high collector currents
• High-speed switching capability with short storage times
• Complementary pairing available with the 2SC2655 NPN transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• Power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix requirements for RoHS compliance status, as indicated by lot number markings. Confirm that the requested variant matches the required hFE classification range. Ensure the procurement documentation references the official Toshiba Semiconductor datasheet for absolute maximum ratings and derating guidelines prior to finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current handling up to 2 A with moderate voltage ratings. Consider the complementary 2SC2655 for push-pull configurations. Evaluate thermal management needs based on the 900 mW power dissipation limit and safe operating area curves. Verify that the TO-92MOD package fits the mechanical constraints of the target PCB layout.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of general-purpose PNP bipolar junction transistors. These devices are designed for low-frequency and audio frequency applications. The series utilizes an epitaxial planar structure to ensure stable electrical characteristics across varying temperatures and operating conditions.

Single Bipolar Transistors Replacement Considerations

The 2SC2655 is documented as the complementary NPN transistor for this device. Direct replacements should match the 2 A current rating, -50 V voltage rating, and TO-92MOD package form factor.