2SA1020-Y(F,M)

Single Bipolar Transistors Overview

The Toshiba 2SA1020-Y(F,M) is a silicon PNP epitaxial transistor utilizing the PCT process. It operates with a maximum collector current of 2 A and a collector-emitter voltage rating of 50 V. The device features a low collector saturation voltage of -0.5 V (max) at -1 A, ensuring efficient power handling. Electrical characteristics include a DC current gain (hFE) range of 70 to 240 for the Y grade, a transition frequency of 100 MHz, and a storage time of 1.0 μs. It is housed in a JEDEC TO-92MOD package with a total power dissipation capacity of 900 mW.

Single Bipolar Transistors Feature Summary

• Utilizes PCT process technology for high-speed switching performance
• Provides low collector saturation voltage for efficient power amplification
• Features high DC current gain with specific grading classifications

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by checking for an underlined lot number on the component marking or contacting the manufacturer directly. Confirm that the ordering suffix matches the required hFE classification and packaging format. Ensure compliance with general electronics application restrictions and avoid use in unintended high-reliability sectors without explicit permission.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP transistor with a 2 A continuous current capability and 50 V breakdown voltage. The Y grade offers a higher minimum hFE compared to other grades. Verify thermal derating requirements against the safe operating area curves for the intended ambient temperature conditions.

Single Bipolar Transistors Part Context

This component belongs to the 2SA series of PNP transistors manufactured by Toshiba Semiconductor and Storage. It serves as a complementary device to the NPN 2SC2655 transistor. The series is designed for general-purpose audio and switching applications within standard consumer and industrial electronics equipment.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC2655 as the complementary NPN counterpart. No direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the hFE classification range for the 'Y' grade?

The 'Y' grade indicates a DC current gain (hFE) range of 120 to 240 when measured at VCE = -2 V and IC = -0.5 A.

How is RoHS compatibility indicated on the component?

RoHS compatibility is identified by an underlined line beneath the Lot Number on the component marking. An unmarked lot number indicates non-RoHS compliance.

What is the typical storage time for this transistor?

The typical storage time (tstg) is 1.0 μs, measured under specific switching test conditions.