2SA1020-Y(ND1,AF)

Description：TRANS PNP 50V 2A TO-92MOD
Series：-

SKU:9fef8a76a2e5 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA1020-Y(ND1,AF) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1020-Y(ND1,AF)

Description：TRANS PNP 50V 2A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 1A
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 500mA, 2V
Power - Max：900 mW
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1020-Y(ND1,AF)

2SA1020-Y(ND1,AF)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1020-Y(ND1,AF) is a PNP epitaxial silicon transistor utilizing the PCT process. It features a maximum collector current of −2 A and a collector-emitter breakdown voltage of −50 V. The device supports high power dissipation up to 900 mW and offers a transition frequency of 100 MHz. Electrical characteristics include a low collector saturation voltage of −0.5 V at −1 A and a storage time of 1.0 μs. It is packaged in a JEDEC TO-92MOD (TO-92) format.

Single Bipolar Transistors Feature Summary

Designed for power amplifier applications with high collector power dissipation capabilities.
Optimized for power switching applications featuring low collector saturation voltage.
Provides high-speed switching performance with specified transition frequency.
Functionally complementary to the 2SC2655 NPN transistor.

Single Bipolar Transistors Applications

Power Amplifier Applications
Power Switching Applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Ensure the selected variant matches the required DC current gain classification for the intended circuit design before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring a robust PNP transistor capable of handling up to 2 A continuous collector current. Consider its 900 mW power dissipation rating and TO-92MOD package constraints when designing thermal management solutions. Verify that the −50 V voltage ratings align with the system's operational limits.

Single Bipolar Transistors Part Context

This component belongs to the 2SA1020 series of PNP transistors manufactured by Toshiba Semiconductor and Storage. The series utilizes an epitaxial silicon structure with a PCT process to achieve high reliability and performance characteristics suitable for general electronics applications.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SC2655 as the complementary NPN transistor for this series. No other direct substitute part numbers are documented in the provided source material.