2SA1020-Y(T6CN,A,F

Description：TRANS PNP 50V 2A TO-92MOD
Series：-

SKU:87f8bd9b583a Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

2SA1020-Y(T6CN,A,F is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1020-Y(T6CN,A,F

Description：TRANS PNP 50V 2A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 1A
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 500mA, 2V
Power - Max：900 mW
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1020-Y(T6CN,A,F

2SA1020-Y(T6CN,A,F

Single Bipolar Transistors Overview

The Toshiba 2SA1020-Y(T6CN,A,F is a PNP silicon epitaxial transistor utilizing the PCT process. It features a maximum collector current of -2 A and a collector-emitter breakdown voltage of -50 V. The device supports a maximum power dissipation of 900 mW at 25°C ambient temperature, with a junction temperature rating up to 150 °C. Electrical characteristics include a DC current gain (hFE) ranging from 70 to 240 under specific test conditions, a transition frequency of 100 MHz, and a low collector saturation voltage of -0.5 V max at -1 A collector current.

Single Bipolar Transistors Feature Summary

Designed for power amplifier applications with high collector power dissipation capabilities.
Optimized for power switching applications featuring high-speed switching performance.
Provides low collector saturation voltage to minimize energy loss during operation.
Engineered as a complementary component to the 2SC2655 NPN transistor.

Single Bipolar Transistors Applications

Power Amplifier Applications
Power Switching Applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status by checking for an underlined lot number on the component marking, as indicated in the datasheet. Confirm that the ordering suffix matches the required packaging format. Ensure designs account for derating concepts outlined in the Toshiba Semiconductor Reliability Handbook to maintain reliability under heavy loads or elevated temperatures.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring a PNP transistor capable of handling up to 2 A continuous collector current. The device is suitable for general electronics applications including computers, office equipment, and measuring instruments. Verify that the operating voltage does not exceed the -50 V limits for both collector-base and collector-emitter configurations.

Single Bipolar Transistors Part Context

This component belongs to the 2SA1020 series manufactured by Toshiba Semiconductor and Storage. It is a single-element PNP silicon epitaxial type transistor housed in a JEDEC TO-92MOD package. The part is designed for use in general electronic applications and serves as a complementary pair to the 2SC2655.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC2655 as the complementary NPN transistor for this component. No other direct substitute part numbers are documented in the provided source material.