2SA1020-Y(T6ND3,AF

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1020-Y(T6ND3,AF) is a PNP silicon epitaxial transistor utilizing the PCT process. It features a maximum collector current of -2 A and a collector-emitter breakdown voltage of -50 V. The device provides high power dissipation capability of 900 mW and low saturation voltage of -0.5 V at -1 A. Electrical characteristics include a DC current gain (hFE) range of 70 to 240 at -0.5 A, a transition frequency of 100 MHz, and storage time of 1.0 μs. It operates within a junction temperature range of -55 °C to 150 °C.

Single Bipolar Transistors Feature Summary

• Designed for power amplifier and power switching applications
• Features low collector saturation voltage for efficient operation
• Provides high-speed switching performance with short storage times
• Complements the 2SC2655 NPN transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• Power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by contacting the manufacturer or authorized distributor, as markings indicate compliance only when underlined. Confirm the specific Y hFE binning classification matches design requirements. Ensure ordering suffixes align with packaging preferences such as tape and reel formats.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current handling up to 2 A and robust power dissipation in a TO-92MOD package. Consider the complementary 2SC2655 for push-pull configurations. Evaluate thermal derating curves for ambient temperatures exceeding 25 °C to maintain reliability within safe operating area limits.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of PNP transistors manufactured by Toshiba Semiconductor and Storage. It utilizes an epitaxial structure and PCT process technology. The device is housed in a JEDEC TO-92MOD plastic encapsulated package suitable for through-hole mounting.

Single Bipolar Transistors Replacement Considerations

The 2SC2655 is documented as the complementary NPN transistor for this device family.