2SA1020-Y(T6TR1,AF

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1020-Y(T6TR1,AF) is a PNP silicon epitaxial transistor manufactured using the PCT process. It features a JEDEC TO-92MOD package with three leads. The device supports a maximum collector current of -2 A and a collector-emitter breakdown voltage of -50 V. Key electrical parameters include a DC current gain (hFE) ranging from 70 to 240 at -0.5 A, a transition frequency of 100 MHz, and a collector power dissipation of 900 mW. The component is designed for high-speed switching applications with a typical storage time of 1.0 μs.

Single Bipolar Transistors Feature Summary

• Utilizes PCT process technology for enhanced performance characteristics
• Provides low collector saturation voltage for efficient power handling
• Offers high-speed switching capabilities suitable for rapid signal transitions
• Designed as a complementary pair to the 2SC2655 NPN transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the specific tape and reel packaging configuration required for automated assembly processes. Confirm RoHS compatibility status directly with the manufacturer or authorized distributor, as environmental compliance may vary by production lot. Ensure the hFE classification code corresponds to the necessary gain range for the target circuit design before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high collector current capability up to 2 A in a standard through-hole package. Consider the 900 mW power dissipation limit and derating requirements for thermal management in enclosed environments. Verify that the -50 V voltage rating aligns with the maximum operating voltages of the application to ensure reliable operation within absolute maximum ratings.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of PNP transistors produced by Toshiba Semiconductor and Storage. The series is characterized by high voltage and high current capabilities, making it suitable for general electronics applications including computers, office equipment, and home appliances. The specific model utilizes a plastic-encapsulated TO-92MOD form factor commonly used in legacy and industrial designs.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SC2655 as the complementary NPN transistor for this component. Direct replacement requires verifying pinout compatibility and ensuring the substitute meets the same -2 A current and -50 V voltage specifications.