2SA1162-O-AP

Single Bipolar Transistors Overview

The MCC 2SA1162-O-AP is a PNP silicon epitaxial planar transistor in an SOT-23 package. It features a collector-emitter breakdown voltage of -50V and a continuous collector current of 0.15A. The device dissipates 0.15W at 25°C, with a junction temperature range of -55°C to +150°C. The 'O' rank specifies a DC current gain (hFE) between 70 and 140 at IC=-2.0mA and VCE=-6.0V. Transition frequency reaches 80MHz, while saturation voltage is -0.3V max at high drive currents.

Single Bipolar Transistors Feature Summary

• Plastic-encapsulated construction meeting UL 94 V-0 flammability standards
• Integrated hFE ranking for consistent gain selection
• Designed for low-noise small-signal amplification applications

Single Bipolar Transistors Applications

• Audio output stages in consumer electronics
• Signal inversion circuits
• General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance attributes such as halogen-free status or tape-and-reel packaging quantities. Ensure the component source is an authorized distributor to guarantee authenticity and traceability, as unauthorized sources may lack warranty coverage or quality assurance guarantees provided by Micro Commercial Components.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -50V collector-base voltage rating is required for compact designs. The SOT-23 package suits space-constrained PCB layouts. Verify that the required hFE range aligns with the 'O' classification (70-140). Consider thermal dissipation limits of 0.15W during circuit design to ensure operation within the specified junction temperature range under expected load conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1162 series of PNP silicon transistors manufactured by Micro Commercial Components. The series includes variants distinguished by hFE gain rankings, marked as SO, SY, and SG on the device body. These components are designed as complementary pairs for use in amplifier and switching circuits, offering a balance of voltage handling and current capacity in a standard surface-mount footprint.

Single Bipolar Transistors Replacement Considerations

Consult official datasheets for direct pin-compatible substitutes from other manufacturers. Verify that alternative parts meet the -50V VCEO requirement and 0.15A Ic limit. Ensure the replacement package matches the SOT-23 dimensions and that the hFE characteristics satisfy the specific circuit biasing requirements originally designed for the 2SA1162-O rank.

Single Bipolar Transistors FAQ

What does the 'O' suffix indicate in the part number?

The 'O' suffix denotes the DC current gain (hFE) ranking, specifically covering a range of 70 to 140.

Is the 2SA1162-O-AP RoHS compliant?

Yes, the standard version is lead-free and RoHS compliant. A '-P' suffix explicitly designates RoHS compliance in some contexts, but the base product meets these standards.

What is the maximum power dissipation?

The maximum power dissipation is 0.15 Watts at an ambient temperature of 25°C.