Single Bipolar Transistors 2SA1162S-Y,LF product image

2SA1162S-Y,LF

  • Description:TRANS PNP 50V 0.15A S-MINI
  • Series:-

SKU:bcb305785c5a Category: Brand:

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2SA1162S-Y,LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 0.15A S-MINI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1162S-Y,LF

  • Description:TRANS PNP 50V 0.15A S-MINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 2mA, 6V
  • Power - Max:150 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1162S-Y,LF

2SA1162S-Y,LF

Single Bipolar Transistors Overview

The 2SA1162S-Y,LF is a small signal PNP silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector current of 0.15 A and a collector-emitter breakdown voltage of 50 V. The device offers a minimum DC current gain (hFE) of 120 and is designed for low noise applications with a typical noise figure of 1 dB. It utilizes a surface-mount SOT-323 package.

Single Bipolar Transistors Feature Summary

  • Utilizes PCT process technology for high reliability
  • Provides excellent hFE linearity across operating currents
  • Engineered for low noise performance in audio circuits
  • Designed as a complementary pair to the 2SC2712 NPN transistor

Single Bipolar Transistors Applications

  • Audio frequency general purpose amplifiers
  • Low noise pre-amplification stages
  • Small signal switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'Y' and 'LF' against official Toshiba documentation to confirm lead-free compliance and binning specifications. Ensure the ordering code matches the exact package variant required for your PCB layout. Cross-reference the manufacturer's latest datasheet to validate active status and any potential design changes or obsolescence notices before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a compact PNP transistor with low noise characteristics. It serves as the direct complementary match to the 2SC2712 NPN transistor, facilitating balanced differential pairs. Consider its 50V rating and 150mA current limit when determining suitability for the target circuit's voltage and load requirements.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's lineup of small signal bipolar transistors utilizing the PCT epitaxial process. It is specifically categorized for audio frequency applications where signal integrity and low distortion are critical. The device complements the 2SC2712 series, allowing for matched performance in push-pull or differential amplifier configurations within consumer electronics and audio equipment.

Single Bipolar Transistors Replacement Considerations

The 2SC2712 is documented as the complementary NPN counterpart. Verify pinout compatibility and electrical parameters against alternative PNP transistors if sourcing from different manufacturers.

2SA1162S-Y,LF2SA1162S-Y,LF

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