2SA1186

Single Bipolar Transistors Overview

The 2SA1186 is a Silicon PNP Epitaxial Planar Transistor designed for audio and general-purpose applications. It features a collector-emitter voltage (VCEO) of -150 V, a collector current (IC) of -10 A, and a power dissipation (PC) of 100 W at 25 °C case temperature. The device offers a transition frequency (fT) of 60 MHz and maintains constant hFE characteristics across a wide current range. Key electrical limits include a collector-base voltage (VCBO) of -150 V, an emitter-base voltage (VEBO) of -5 V, and a maximum base current (IB) of -2 A. Thermal resistance from junction to case is 1.25 °C/W.

Single Bipolar Transistors Feature Summary

• Complementary to the 2SC2837 NPN transistor
• Linear Amplifier Power Transistor (LAPT) design
• Constant DC Current Gain (hFE) in a wide current range
• Bare lead frame construction compliant with RoHS standards

Single Bipolar Transistors Applications

• Audio Power Amplifiers
• General Purpose Electronic Equipment

Single Bipolar Transistors Procurement Notes

Verify component authenticity by checking the marking diagram for the specific device code 'A1186', lot number, and hFE rank suffix. Confirm compliance with applicable environmental regulations such as EU RoHS. Ensure that the procurement channel provides valid documentation regarding the product's status as not recommended for new designs.

Single Bipolar Transistors Selection Notes

Select this component when a high-current PNP transistor is required for audio amplification circuits. Verify that the application operates within the absolute maximum ratings, specifically the -150 V collector-emitter voltage and -10 A collector current. Consider the thermal management requirements given the 1.25 °C/W junction-to-case thermal resistance and the 100 W power dissipation limit at 25 °C case temperature.

Single Bipolar Transistors Part Context

The 2SA1186 belongs to Sanken Electric's lineup of Linear Amplifier Power Transistors. It is manufactured using silicon epitaxial planar technology and housed in a TO3P-3L package. The datasheet explicitly states that this part is not recommended for new designs, indicating it may be superseded or phased out in favor of newer alternatives within the manufacturer's portfolio.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SC2837 as the complementary NPN transistor. No other direct replacement part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is -150 V.

Is the 2SA1186 suitable for new designs?

No, the datasheet explicitly marks the 2SA1186 as not recommended for new designs.

What is the typical transition frequency?

The typical transition frequency (fT) is 60 MHz.