Single Bipolar Transistors 2SA1201-O-AP product image

2SA1201-O-AP

  • Description:TRANS PNP 120V 0.8A SOT-89
  • Series:-

SKU:30cc7bc952b9 Category: Brand:

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2SA1201-O-AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS PNP 120V 0.8A SOT-89. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1201-O-AP

  • Description:TRANS PNP 120V 0.8A SOT-89
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 100mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1201-O-AP

2SA1201-O-AP

Single Bipolar Transistors Overview

The 2SA1201-O-AP is a PNP silicon power transistor manufactured by Micro Commercial Components (MCC). It operates within a collector-emitter voltage range of -120V and supports a continuous collector current of up to -800mA. The device features a DC current gain (hFE) ranging from 80 to 240 at a collector current of -500mA. Electrical characteristics include a transition frequency of 120MHz and a collector-base cutoff current of -100nA. Thermal performance specifies a junction-to-ambient resistance of 250°C/W, with an operating temperature range spanning from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Designed for power amplifier applications
  • RoHS compliant lead-free finish available
  • Epoxy casing meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official MCC documentation to confirm compliance status and packaging type. Ensure sourcing channels are authorized distributors to guarantee component authenticity and traceability. Confirm that the intended application does not involve life support systems without explicit manufacturer approval.

Single Bipolar Transistors Selection Notes

Select this component based on its -120V collector-emitter voltage rating and -800mA current handling capability. Evaluate the hFE range of 80 to 240 to ensure compatibility with required amplification levels. Consider the thermal resistance and operating temperature limits when designing heat dissipation strategies for the target circuit environment.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1201 series of PNP silicon power transistors produced by Micro Commercial Components. The series includes variants distinguished by hFE classification ranges and specific ordering suffixes. These components are housed in SOT-89 packages and are engineered for robust performance in standard electronic environments.

Single Bipolar Transistors Replacement Considerations

Consult official datasheets to identify direct substitutes with matching electrical ratings and pin configurations. Verify that any alternative component maintains equivalent thermal characteristics and package dimensions to ensure seamless integration into existing designs.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) rating is -120V.

How is the DC current gain classified?

The DC current gain (hFE) is classified into two ranges: 80-160 for the 'O' rank and 120-240 for the 'Y' rank.

What is the transition frequency of the device?

The transition frequency (fT) is specified as 120MHz under standard test conditions.

2SA1201-O-AP2SA1201-O-AP

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