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2SA1208S-AE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanyo. Its product description is TRANS PNP 160V 0.07A 3-MP. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SA1208S-AE
- Description：TRANS PNP 160V 0.07A 3-MP
- Series：-
- Mfr：Sanyo
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：70 mA
- Voltage - Collector Emitter Breakdown (Max)：160 V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 3mA, 30mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：140 @ 10mA, 5V
- Power - Max：900 mW
- Frequency - Transition：150MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body
- Supplier Device Package：3-MP
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SA1208S-AE
Single Bipolar Transistors Overview
The Sanyo 2SA1208S-AE is a PNP silicon epitaxial planar transistor designed for high-voltage switching applications. It utilizes FBET process technology to achieve high breakdown voltage and fast switching speeds. The device features excellent linearity of DC current gain (hFE) and small collector-base capacitance (Cob). It is housed in a TO-92LM plastic package, suitable for surface mount or through-hole integration depending on the specific lead configuration.
Single Bipolar Transistors Feature Summary
- Adoption of FBET process for enhanced performance
- High breakdown voltage capability
- Excellent hFE linearity and low Cob
- Fast switching speed characteristics
Single Bipolar Transistors Applications
- Audio output predriver circuits
- High-voltage switching applications
- AF power amplifier predrivers
Single Bipolar Transistors Procurement Notes
Verify the exact suffix 'AE' against official Sanyo Semicon Device documentation to confirm pinout and packaging specifics. Ensure the component matches the TO-92LM form factor described in public datasheets. Cross-reference with the base part number 2SA1208 for functional equivalence if sourcing alternatives.
Single Bipolar Transistors Selection Notes
Select this component for designs requiring high-voltage PNP switching with fast response times. The FBET process offers advantages in linearity compared to standard bipolar transistors. Consider the thermal dissipation requirements of the TO-92LM package for audio predriver loads.
Single Bipolar Transistors Part Context
The 2SA1208 series includes complementary NPN devices like the 2SC2910. These transistors are engineered for audio applications, specifically as predrivers for 80W output stages. The family shares similar electrical characteristics optimized for high-voltage operation and low distortion.
Single Bipolar Transistors Replacement Considerations
Publicly documented substitutes include the 2SA1011, 2SA1257, 2SA1415, and 2SA1418 from Sanyo. Unisonic Technologies offers the 2SC3648 as a related high-voltage switching predriver alternative.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
