2SA1242-Y(Q)

Single Bipolar Transistors Overview

The Toshiba 2SA1242-Y(Q) is a silicon PNP epitaxial transistor utilizing the PCT process. It features a collector-emitter voltage of -20 V and a continuous collector current of -5 A, with a pulsed rating of -8 A. The device offers high power dissipation of 10 W at case temperature and 1.0 W at ambient temperature. DC current gain ranges from 160 to 320 for the Y suffix at low currents, dropping to a minimum of 70 at higher loads. Transition frequency reaches 170 MHz.

Single Bipolar Transistors Feature Summary

• Utilizes PCT process technology for improved performance characteristics
• Provides excellent hFE linearity across varying collector currents
• Features low collector saturation voltage for efficient switching
• Supports high power dissipation capabilities under thermal constraints

Single Bipolar Transistors Applications

• Strobe flash driver circuits
• Medium power amplifier stages
• General electronics applications in computers and office equipment

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate potential variations. Confirm specific hFE binning requirements corresponding to the ordering suffix. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing designs involving heavy loads or significant temperature changes.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high current handling up to 5 A with moderate voltage ratings. The PCT process ensures reliable operation in medium power scenarios. Ensure adequate heat sinking is provided to maintain junction temperatures within limits during continuous operation, particularly when operating near maximum power dissipation thresholds.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA1242 series of silicon PNP transistors. It is designed specifically for general electronics use, including home appliances and industrial robots. The device complements other components in amplifier and switching topologies where high current gain and fast transition frequencies are required.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Do not assume direct pin-compatible replacements without verifying electrical parameters against the original datasheet specifications.

Single Bipolar Transistors FAQ

What is the difference between the Y and Q suffixes?

The suffix indicates the DC current gain (hFE) classification. The Y suffix specifies an hFE range of 160 to 320 at VCE = -2 V and IC = -0.5 A.

What is the maximum pulsed collector current?

The maximum pulsed collector current is -8 A, limited by a pulse width of 10 ms maximum and a duty cycle of 30% maximum.

Is this component suitable for aerospace applications?

No. The product is not intended for unintended uses such as aerospace industry equipment, medical devices, or transportation control systems.