2SA1298-Y,LF

Single Bipolar Transistors Overview

The Toshiba 2SA1298-Y,LF is a silicon PNP epitaxial planar transistor manufactured using the PCT process. It is housed in a JEDEC TO-236MOD (SOT-23) package. The device features a high DC current gain ranging from 100 to 320 and a low saturation voltage of -0.4 V maximum at IC = -500 mA and IB = -20 mA. Absolute maximum ratings include a collector-base voltage of -30 V, collector-emitter voltage of -25 V, emitter-base voltage of -5 V, and collector current of -800 mA. The transition frequency is typically 120 MHz.

Single Bipolar Transistors Feature Summary

• High DC current gain for efficient signal amplification
• Low saturation voltage for improved power efficiency
• Designed as a complementary pair to the 2SC3265 NPN transistor

Single Bipolar Transistors Applications

• Low frequency power amplifier circuits
• Power switching applications
• Driver stages for small motors

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'Y' corresponds to the required hFE binning range of 160 to 320, as defined by the manufacturer's classification system. Confirm that the LF designation indicates compliance with applicable environmental directives. Ensure the component is sourced directly from authorized distributors or verified suppliers to guarantee authenticity and traceability against the official Toshiba datasheet specifications.

Single Bipolar Transistors Selection Notes

Select this component when a compact SOT-23 footprint is required for general-purpose PNP switching or amplification tasks. The device is suitable for designs needing a minimum hFE of 160. Consider its complementary relationship with the 2SC3265 for push-pull configurations. Evaluate thermal derating requirements based on the 200 mW power dissipation limit and the specified junction temperature constraints during operation.

Single Bipolar Transistors Part Context

This component belongs to the family of small-signal silicon PNP transistors produced by Toshiba Electronic Devices & Storage Corporation. Manufactured since October 1982, it utilizes an epitaxial planar structure optimized for low-frequency performance. The device serves as a standard discrete semiconductor solution for consumer electronics and industrial control systems requiring reliable switching capabilities in a miniature surface-mount package.

Single Bipolar Transistors Replacement Considerations

The 2SC3265 is documented as the direct complementary counterpart. Verify pinout compatibility and electrical parameter alignment before substituting with other generic PNP transistors in the SOT-23 package.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SA1298-Y variant?

The 'Y' suffix indicates a DC current gain (hFE) classification ranging from 160 to 320 at VCE = -1 V and IC = -100 mA.

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is -25 V when measured at IC = -10 mA and IB = 0 mA.

Is this transistor suitable for high-frequency RF applications?

No, the datasheet specifies it for low-frequency power amplifier and power switching applications, with a typical transition frequency of 120 MHz.