2SA1303

Single Bipolar Transistors Overview

The Sanken Electric USA Inc. 2SA1303 is a Silicon PNP Epitaxial Planar Transistor designed for audio and general-purpose applications, serving as the complement to the 2SC3284 type. It features a collector-emitter breakdown voltage of -150 V minimum and a continuous collector current rating of -14 A. The device supports a maximum power dissipation of 125 W at a case temperature of 25°C. Key electrical characteristics include a DC current gain (hFE) ranging from 50 to 180 depending on the rank, a saturation voltage of -2.0 V maximum at -5 A, and a transition frequency of 50 MHz typical. Switching times are specified with a turn-on time of 0.25 ms and a storage time of 0.85 ms under standard test conditions.

Single Bipolar Transistors Feature Summary

• High collector-emitter breakdown voltage capability for robust operation in demanding circuits
• Complementary design matched specifically with the 2SC3284 NPN transistor for balanced performance
• Optimized linearity of DC current gain suitable for high-fidelity audio signal processing

Single Bipolar Transistors Applications

• Audio amplifier output stages
• General purpose switching circuits
• Power supply regulation

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank required for your application, as the component is available in O, P, and Y grades with distinct gain ranges. Confirm the MT-100 (TO-3P) package compatibility with your thermal management strategy. Ensure that the ordering documentation explicitly references the Sanken Electric USA Inc. manufacturer to guarantee authenticity and adherence to the published absolute maximum ratings and electrical characteristics.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage PNP transistor with significant current handling capacity is needed. The -150 V breakdown voltage allows for use in higher voltage rails compared to standard low-voltage transistors. Consider the thermal resistance characteristics and the need for an appropriate heatsink, as the 125 W power rating is dependent on maintaining a case temperature of 25°C. The complementary nature to the 2SC3284 makes it ideal for push-pull configurations requiring matched symmetry.

Single Bipolar Transistors Part Context

This device belongs to the family of silicon PNP epitaxial planar transistors manufactured by Sanken Electric. It is engineered to provide reliable performance in power amplification roles. The MT-100 package provides a sturdy mechanical structure for high-power dissipation applications. The transistor is characterized by its ability to handle large collector currents while maintaining stable operation across a wide temperature range.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SC3284 as the complementary NPN counterpart. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What are the available hFE ranks for the 2SA1303?

The component is available in three hFE ranks: O (50 to 100), P (70 to 140), and Y (90 to 180).

What is the maximum power dissipation rating?

The maximum power dissipation is 125 W when the case temperature is maintained at 25°C.

Is this transistor suitable for audio applications?

Yes, the datasheet explicitly lists audio applications as a primary use case, highlighting good linearity of hFE.