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2SA1312-BL(TE85L,F is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 120V 0.1A S-MINI. Review the specifications below when checking this part for your BOM.
The Toshiba Semiconductor and Storage 2SA1312-BL(TE85L,F is a PNP bipolar junction transistor (BJT) designed for surface mount applications. It features a maximum collector-emitter voltage of -120 V and a continuous collector current of -100 mA. The device offers a transition frequency of 100 MHz and a power dissipation rating of 150 mW. It operates within a junction temperature range up to 125°C and utilizes the S-Mini (SOT-23-3) package.
Verify the specific ordering code includes the TE85L suffix to confirm the tape and reel packaging format. Ensure compatibility with the S-Mini footprint during PCB layout. Confirm that the -120 V rating aligns with the target circuit's voltage requirements before finalizing component selection.
Select this component when high voltage isolation is required in a compact surface mount form factor. The 100 MHz transition frequency supports moderate speed switching needs. Consider the 150 mW power dissipation limit for thermal management strategies in dense board layouts.
This part belongs to the 2SA series of PNP transistors from Toshiba Semiconductor and Storage. It complements other general-purpose BJT offerings by providing enhanced voltage ratings compared to standard low-voltage variants. The S-Mini package allows for automated assembly processes common in modern electronics manufacturing.
Direct substitutes include the 2SA1312 without the BL suffix if voltage ratings are sufficient. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers' equivalents for the SOT-23-3 package.
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