2SA1312GRTE85LF

$0.26

Description：TRANS PNP 120V 0.1A S-MINI
Series：-

SKU:d4b1a6684999 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA1312GRTE85LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 120V 0.1A S-MINI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1312GRTE85LF

Description：TRANS PNP 120V 0.1A S-MINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 6V
Power - Max：150 mW
Frequency - Transition：100MHz
Operating Temperature：125°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：S-Mini
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1312GRTE85LF

2SA1312GRTE85LF

Single Bipolar Transistors Overview

The Toshiba 2SA1312GRTE85LF is a silicon PNP epitaxial planar transistor utilizing the PCT process, housed in a SC-59 (SOT-76) package. It features a collector-emitter voltage of -120 V and a collector current rating of -100 mA. The device offers a DC current gain ranging from 200 to 700 and a transition frequency of 100 MHz. Noise performance includes a typical noise figure of 0.2 dB at 1 kHz. Maximum junction temperature is 150 °C for LF(T) suffix devices.

Single Bipolar Transistors Feature Summary

High breakdown voltage capability with a collector-emitter voltage rating of -120 V
Low noise characteristics optimized for audio frequency applications
Wide DC current gain range spanning from 200 to 700
Complementary pairing available with the 2SC3324 NPN transistor

Single Bipolar Transistors Applications

Audio frequency low noise amplifier circuits
General-purpose amplification stages requiring high linearity
Signal processing within consumer electronic equipment

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix matches the required thermal specifications. Devices ending in LF(T) support a maximum junction temperature of 150 °C, while other suffixes are limited to 125 °C. Confirm compliance with environmental directives such as RoHS before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage handling alongside low noise performance. Ensure the application operates within the specified collector current limits. Verify that the required hFE bin aligns with the GR or BL classification options provided by the manufacturer.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA1312 series of PNP transistors designed specifically for audio applications. It utilizes an epitaxial planar structure to achieve superior electrical characteristics compared to standard general-purpose transistors.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC3324 as the complementary NPN counterpart. No other direct substitute part numbers are documented in the official source material.