Single Bipolar Transistors 2SA1315-Y,T6ASNF(J product image

2SA1315-Y,T6ASNF(J

  • Description:TRANS PNP 80V 2A TO-92MOD
  • Series:-

SKU:4a36ce4b8176 Category: Brand:

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2SA1315-Y,T6ASNF(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 80V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1315-Y,T6ASNF(J

  • Description:TRANS PNP 80V 2A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:900 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1315-Y,T6ASNF(J

2SA1315-Y,T6ASNF(J

Single Bipolar Transistors Overview

The Toshiba 2SA1315-Y,T6ASNF(J) is a PNP silicon epitaxial transistor utilizing the PCT process, designed for power amplifier and switching applications. It features a collector-emitter breakdown voltage of -80 V and a maximum collector current of -2 A. The device achieves a low collector saturation voltage of -0.5 V (max) at -1 A and exhibits a typical storage time of 1.0 μs. It operates within a junction temperature range up to 150 °C with a power dissipation rating of 900 mW.

Single Bipolar Transistors Feature Summary

  • Low collector saturation voltage for efficient power handling
  • High-speed switching capability with short storage time
  • Complementary pairing with the 2SC3328 NPN transistor

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • General power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by contacting Toshiba sales representatives, as markings indicate potential variations. Confirm that the specific ordering suffix matches the required hFE classification and packaging format. Ensure designs account for derating concepts outlined in the Toshiba Semiconductor Reliability Handbook to maintain long-term operational stability under varying thermal loads.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage PNP switching or amplification where low saturation voltage is critical. Verify that the -80 V collector-emitter rating aligns with circuit requirements. Consider the complementary 2SC3328 for push-pull configurations. Evaluate thermal management strategies to ensure operation remains within the specified safe operating area and power dissipation limits.

Single Bipolar Transistors Part Context

This device belongs to the Toshiba 2SA1315 series of PNP transistors manufactured using the PCT process. It is categorized for use in general electronics applications such as computers, office equipment, and home appliances. The component is distinct from other series members like the 2SA1358, which offers higher voltage ratings but different package characteristics.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC3328 as the complementary NPN transistor for paired applications. No direct substitute part numbers are documented in the provided source material.

2SA1315-Y,T6ASNF(J2SA1315-Y,T6ASNF(J

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