2SA1338-5-TB-E

Single Bipolar Transistors Overview

The 2SA1338-5-TB-E is a PNP epitaxial planar silicon transistor manufactured by onsemi. It features a maximum collector-to-emitter voltage of -50 V and a continuous collector current capacity of -100 mA. The device utilizes an ultrasmall CPA surface-mount package to facilitate compact circuit designs. Key electrical characteristics include a high transition frequency (fT) of 300 MHz at -5 mA, ensuring suitability for high-speed switching applications.

Single Bipolar Transistors Feature Summary

• Adoption of FBET process technology
• High breakdown voltage capability
• Large current capacity combined with high fT
• Ultrasmall-sized package design

Single Bipolar Transistors Applications

• High-speed switching circuits
• General-purpose amplifier stages
• Compact consumer electronic devices

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank '5' designation against the manufacturer's binning documentation, as this suffix indicates a particular DC current gain range. Confirm that the CPA package dimensions align with the target PCB footprint requirements before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring a PNP transistor with a 50 V rating in a minimal footprint. Ensure the application operates within the specified junction temperature limits and accounts for the thermal dissipation constraints inherent to the small surface-mount package.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1338/2SC3392 series, which pairs PNP and NPN transistors designed for complementary operation. Both devices share identical structural features and are optimized for high-speed switching performance within ultrasmall packages suitable for modern slim electronic assemblies.

Single Bipolar Transistors Replacement Considerations

The 2SC3392 serves as the direct N-channel complementary counterpart within the same datasheet. Verify pinout compatibility and electrical symmetry if substituting or pairing components in push-pull configurations.

Single Bipolar Transistors FAQ

What does the '-5' suffix indicate in the part number?

The suffix denotes the DC current gain (hFE) ranking. Rank 5 corresponds to an hFE range of 140 to 240 when measured at a collector current of -10 mA.

What is the maximum allowable power dissipation?

The absolute maximum rating for collector dissipation is 200 mW at an ambient temperature of 25°C.

How is the transition frequency defined for this device?

The transition frequency (fT) is specified as 300 MHz, measured under conditions of a collector current of -5 mA and a collector-to-emitter voltage of -10 V.