2SA1417S-TD-E

Single Bipolar Transistors Overview

The onsemi 2SA1417S-TD-E is a single PNP bipolar junction transistor (BJT) designed for high-voltage and high-current applications. It features a collector-emitter breakdown voltage of 160 V and a continuous collector current rating of 0.7 A, with a peak pulse current capacity of 1.5 A. The device utilizes an ultrasmall PCP package to facilitate high-density hybrid IC designs. Key electrical characteristics include a low collector-emitter saturation voltage and a transition frequency of 360 MHz, ensuring fast switching speeds suitable for demanding power management tasks.

Single Bipolar Transistors Feature Summary

• High breakdown voltage combined with large current capacity for robust power handling
• Adoption of FBET and MBIT processes to achieve fast switching performance
• Ultrasmall physical size enabling easy integration into high-density hybrid ICs

Single Bipolar Transistors Applications

• Color TV audio output stages
• Inverter circuits
• High-density hybrid IC implementations

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TD-E against the manufacturer's latest documentation to confirm pinout compatibility and RoHS status. Cross-reference the datasheet revision date to ensure alignment with current manufacturing standards. Confirm that the PCP package dimensions match the target PCB footprint requirements before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when circuit design requires a PNP transistor capable of withstanding 160 V while managing up to 0.7 A of continuous current. The low saturation voltage makes it efficient for switching applications where power loss minimization is critical. Ensure the operating temperature range aligns with the specified limits for reliable long-term performance in the intended environment.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1417/2SC3648 series of bipolar transistors manufactured by onsemi. The series is characterized by its combination of high voltage ratings and compact packaging technology. These devices are engineered to replace older, bulkier alternatives in modern electronic designs requiring space-saving solutions without compromising electrical performance or reliability.

Single Bipolar Transistors Replacement Considerations

• 2SC3647S-TD-E
• 2SA1418S-TD-E
• 2SC3648S-TD-E

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2SA1417S-TD-E?

The maximum collector-emitter voltage (VCEO) is rated at 160 V.

Does the 2SA1417S-TD-E support high-frequency switching?

Yes, it features a transition frequency (fT) of 360 MHz, indicating suitability for fast switching applications.

What package type does the 2SA1417S-TD-E use?

It utilizes the PCP package, which is noted for its ultrasmall size to aid in high-density circuit board layouts.