2SA1418S-TD-E

Single Bipolar Transistors Overview

The 2SA1418S-TD-E is a PNP bipolar junction transistor manufactured by onsemi. It features a collector-to-emitter voltage of -160 V and a continuous collector current of -0.7 A, with a pulse current rating of -1.5 A. The device utilizes FBET and MBIT processes to achieve fast switching speeds and low saturation voltages. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 400 depending on the rank, a gain-bandwidth product of 120 MHz, and an output capacitance of approximately 8 pF. It operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for high breakdown voltage and large current capacity
• Provides fast switching speed suitable for high-frequency applications
• Features ultrasmall PCP package dimensions facilitating high-density hybrid IC designs

Single Bipolar Transistors Applications

• Color TV audio output circuits
• Inverter systems

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TD-E confirms lead-free status and reel packaging containing 1,000 pieces per unit. Confirm the device corresponds to the PNP variant designated as 2SA1418 rather than the NPN counterpart. Ensure compatibility with SC-62 or SOT-89 land patterns during PCB layout planning.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage handling up to 160 V combined with moderate current capabilities around 0.7 A. The low saturation voltage characteristic makes it appropriate for efficient switching applications where power dissipation needs to be minimized. Consider the available hFE ranks to match gain requirements for specific amplifier or driver stages.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1418/2SC3648 series of single PCP bipolar transistors produced by onsemi. The series includes both PNP (2SA1418) and NPN (2SC3648) variants sharing identical physical packages and general performance profiles. The 2SA1418S-TD-E specifically denotes the PNP version in tape-and-reel packaging.

Single Bipolar Transistors Replacement Considerations

The datasheet lists 2SC3648S-TD-E and 2SC3648T-TD-E as related parts within the same family document, though these are NPN types. No direct PNP substitutes are explicitly confirmed in the provided text.

Single Bipolar Transistors FAQ

What is the maximum collector-to-base voltage for the 2SA1418S-TD-E?

The absolute maximum rating for collector-to-base voltage (VCBO) is -180 V.

How is the DC current gain classified for this device?

The device is classified into ranks based on hFE at IC = -100 mA: Rank R (100 to 200), Rank S (140 to 280), and Rank T (200 to 400).

What is the typical turn-on time for this transistor?

The specified turn-on time (ton) is typically 50 ns, with a maximum of 60 ns under test conditions.