2SA1429-Y(T2TR,F,M

Single Bipolar Transistors Overview

The Toshiba 2SA1429 is a PNP silicon epitaxial transistor designed for power amplifier and switching applications. It features a collector-emitter voltage of -80 V, a continuous collector current of -2 A, and a collector power dissipation of 1000 mW. The device exhibits a low collector saturation voltage of -0.5 V (max) at -1 A and a typical storage time of 1.0 μs. It operates within a junction temperature range up to 150 °C and is packaged in the JEDEC TO-92 (2-7D101A) format.

Single Bipolar Transistors Feature Summary

• Low collector saturation voltage for efficient power handling
• High-speed switching capability with short storage times
• Complementary pairing with the 2SC3669 NPN transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact binning or environmental compliance status. Confirm package type and marking details directly from the manufacturer datasheet before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage PNP switching with moderate current capabilities. Ensure thermal management accommodates the 1000 mW dissipation limit. Verify that the required DC current gain falls within the specified Y classification range if precise hFE control is necessary.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of general-purpose PNP transistors. It serves as the complementary counterpart to the 2SC3669 NPN transistor, facilitating push-pull configurations in amplifier and driver stages.

Single Bipolar Transistors Replacement Considerations

The 2SC3669 is documented as the direct complementary match. Cross-referencing requires verifying pinout compatibility and ensuring equivalent voltage and current ratings are met by alternative suppliers.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is -80 V.

Is this transistor suitable for high-frequency RF amplification?

No, it is designed for power amplifier and switching applications, not specifically optimized for high-frequency RF operations.

What is the transition frequency of the 2SA1429?

The transition frequency (fT) is typically 80 MHz under standard test conditions.