2SA1507T

Single Bipolar Transistors Overview

The onsemi 2SA1507T is a PNP epitaxial planar silicon bipolar junction transistor housed in a TO-126ML package. It features a collector-emitter voltage of 160 V, a continuous collector current of 1.5 A, and a peak collector current of 2.5 A. The device utilizes FBET and MBIT processes for high breakdown voltage and large current capacity. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 400 depending on the rank, a gain-bandwidth product of 120 MHz, and low saturation voltages. Thermal ratings specify a maximum junction temperature of 150 °C with power dissipation up to 10 W at a case temperature of 25 °C.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability
• Large current capacity
• Adoption of FBET and MBIT process technology
• Plastic-covered heat sink eliminates the need for an insulator during mounting

Single Bipolar Transistors Applications

• Color TV audio output
• Converters
• Inverters

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'T' corresponds to the required bulk packaging configuration of 200 pieces per bag as documented in the official datasheet. Confirm that the component meets all applicable environmental compliance standards relevant to your region before finalizing procurement. Ensure compatibility with existing thermal management designs given the specified power dissipation limits.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring robust switching performance with high voltage tolerance. Consider the hFE ranking requirements for specific circuit gains. Evaluate thermal constraints carefully, as power dissipation drops significantly without a heatsink. Verify pinout alignment with the emitter-collector-base configuration defined in the datasheet.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1507/2SC3902 series of single bipolar transistors manufactured by onsemi. It is designed as a complementary counterpart to the NPN 2SC3902, sharing similar electrical characteristics and physical dimensions within the TO-126ML package family.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SC3902 for NPN applications with matching specifications. Other manufacturers producing equivalent 160V PNP transistors in TO-126 packages may serve as alternatives if electrical parameters are verified against the original datasheet.

Single Bipolar Transistors FAQ

What is the pin configuration for the 2SA1507T?

Pin 1 is the Emitter, Pin 2 is the Collector, and Pin 3 is the Base.

How does the plastic-covered heat sink affect mounting?

It eliminates the need for an additional insulator when mounting the device to a heatsink.

What is the maximum collector current pulse rating?

The maximum collector current pulse rating is 2.5 A.