2SA1552S-E

Single Bipolar Transistors Overview

The onsemi 2SA1552S-E is a single PNP epitaxial planar silicon bipolar junction transistor designed for high-voltage and large-current applications. It features a collector-emitter breakdown voltage (VCEO) of 160 V, a collector-base voltage (VCBO) of 180 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a continuous collector current of 1.5 A and a maximum DC collector current of 2.5 A. With a power dissipation rating of 15 W and a transition frequency (fT) of 120 MHz, it enables ultrahigh-speed switching. The component operates within a temperature range of -55°C to +150°C and utilizes the TP-3 through-hole package.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for enhanced performance
• Provides high voltage and large current capacity
• Enables ultrahigh-speed switching capabilities
• Features a small and slim package for compact designs

Single Bipolar Transistors Applications

• Converters
• Inverters
• Color TV audio output circuits

Single Bipolar Transistors Procurement Notes

Verify component authenticity and datasheet revisions before integration. Confirm RoHS and REACH compliance status with the supplier. Check for End-of-Life notifications or Product Change Notices affecting availability. Ensure storage conditions meet moisture sensitivity requirements. Validate pinout compatibility with existing PCB footprints.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring high-voltage PNP switching with significant current handling. The 160 V rating suits medium-power inverter and converter topologies. Consider the 15 W power dissipation limit for thermal management design. The through-hole TP-3 package dictates specific mounting constraints compared to surface-mount alternatives.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1552 series of bipolar transistors manufactured by onsemi. It is engineered to allow applied sets to be made more compact due to its small form factor. The device complements other components in power conversion and audio output stages where high-speed switching and robust voltage ratings are essential.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence with similar PNP BJT devices if sourcing is restricted due to discontinuation status.