2SA1576AT106R

Single Bipolar Transistors Overview

The 2SA1576AT106R is a PNP general-purpose bipolar junction transistor manufactured by ROHM Semiconductor. It operates with a collector-emitter voltage of -50V and a maximum continuous collector current of -150mA. The device features a transition frequency of 140MHz and a DC current gain ranging from 120 to 390. Power dissipation is rated at 200mW, with a maximum junction temperature of 150°C. It is housed in an SOT-323 (UMT3) surface-mount package.

Single Bipolar Transistors Feature Summary

• Provides excellent hFE linearity for stable amplification performance.
• Designed as a complementary pair to the 2SC4081U3 NPN transistor.

Single Bipolar Transistors Applications

• General purpose small signal amplifier circuits
• Complementary switching applications paired with 2SC4081U3

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm the exact packaging configuration and binning requirements. Confirm RoHS compliance status and check for any end-of-life notifications prior to finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component for low-voltage general-purpose amplification tasks requiring a compact SOT-323 footprint. Ensure the design accommodates the -50V collector-emitter breakdown limit and verify that the required current gain falls within the specified 120 to 390 range.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1576 series of general-purpose transistors. It shares electrical characteristics with variants such as the 2SA1576U3 and 2SA1576UB, differing primarily in packaging and tape-and-reel specifications.

Single Bipolar Transistors Replacement Considerations

The 2SA1576U3 serves as a direct pin-compatible substitute within the same product family.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage rating?

The absolute maximum collector-base voltage (VCBO) is rated at -60V.

Is this transistor suitable for high-frequency applications?

It has a transition frequency (fT) of 140MHz, making it suitable for general-purpose small-signal amplification rather than high-frequency RF applications.