Single Bipolar Transistors 2SA1577T106Q product image

2SA1577T106Q

$0.26
  • Description:TRANS PNP 32V 0.5A UMT3
  • Series:-

SKU:e899a2fa615c Category: Brand:

  
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2SA1577T106Q is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 32V 0.5A UMT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1577T106Q

  • Description:TRANS PNP 32V 0.5A UMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):32 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 3V
  • Power - Max:200 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:UMT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1577T106Q

2SA1577T106Q

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SA1577T106Q is a PNP general-purpose small signal amplifier transistor designed for medium power applications. It operates with a collector current of -500 mA and a collector-emitter voltage of -32 V. The device features a low saturation voltage, making it suitable for low-voltage operation. Key electrical parameters include a DC current gain (hFE) ranging from 120 to 390 and a transition frequency (fT) of 200 MHz. It is housed in an SMD UMT3 package (SOT-323/SC-70) with a maximum power dissipation of 200 mW.

Single Bipolar Transistors Feature Summary

  • Supports large collector current up to -500 mA for medium power handling.
  • Features low collector-emitter saturation voltage ideal for low-voltage circuit operation.
  • Designed as a complementary pair to the 2SC4097 NPN transistor.

Single Bipolar Transistors Applications

  • General purpose small signal amplification
  • Low-voltage switching circuits
  • Complementary amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (QR or R) required for your design, as the datasheet specifies distinct gain ranges. Confirm that the UMT3 (SOT-323) package dimensions align with your PCB footprint. Ensure thermal management supports the 200 mW power dissipation limit under your operating conditions. Check for RoHS compliance status if required by your manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with -500 mA capability and -32 V breakdown is needed. It is specifically suited for designs requiring low saturation voltage to minimize power loss in low-voltage systems. Consider the complementary 2SC4097 if a matched NPN/PNP pair is required for push-pull configurations. Evaluate the 200 mW power dissipation constraint against your thermal environment.

Single Bipolar Transistors Part Context

The 2SA1577 belongs to ROHM's lineup of medium power bipolar junction transistors. It is packaged in the compact UMT3 form factor, also known as SOT-323 or SC-70, which facilitates surface-mount assembly. This series targets general-purpose amplification and switching tasks where moderate current handling and low voltage drops are critical performance factors.

Single Bipolar Transistors Replacement Considerations

The 2SC4097 is documented as the complementary NPN counterpart. No direct PNP substitutes are listed in the official documentation.

Single Bipolar Transistors FAQ

What is the complementary transistor for the 2SA1577?

The 2SA1577 is designed to complement the 2SC4097 NPN transistor.

What is the maximum collector current for this device?

The maximum continuous collector current (IC) is -500 mA.

Is this transistor suitable for high-frequency applications?

It has a transition frequency (fT) of 200 MHz, making it suitable for general-purpose small signal amplification rather than high-frequency RF applications.

2SA1577T106Q2SA1577T106Q
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