2SA1579T106S

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SA1579T106S is a PNP silicon epitaxial planar transistor designed for high-voltage amplifier applications. It features a collector-emitter breakdown voltage of -120V and a maximum continuous collector current of -50mA. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 200mW of power. Packaged in the UMT3 (SOT-323) surface-mount format, it offers a DC current gain (hFE) ranging from 180 to 560 at VCE=-6V and IC=-2mA. Its transition frequency reaches 140MHz, supporting general-purpose amplification tasks.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability of -120V for robust operation in demanding circuits.
• Complementary pairing with the 2SC4102 NPN transistor for matched performance.
• Compact UMT3 surface-mount package suitable for space-constrained designs.

Single Bipolar Transistors Applications

• General-purpose high-voltage amplification
• Switching circuits requiring high collector-emitter voltage tolerance

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix T106 to confirm the UMT3 packaging and reel quantity specifications. Ensure compatibility with existing PCB footprints designated for SOT-323 components. Confirm that the NRND status does not impact long-term supply requirements for your production cycle. Cross-reference electrical parameters against the official datasheet to validate design margins.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with -120V breakdown voltage is required in a compact surface-mount form factor. It serves as the direct complementary match to the 2SC4102 NPN transistor. Consider the hFE range of 180 to 560 for biasing stability. Evaluate the 200mW power dissipation limit against thermal constraints in the final assembly environment.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1579 series of high-voltage amplifier transistors manufactured by ROHM Semiconductor. It is specifically engineered to complement the 2SC4102 NPN type, facilitating push-pull or differential amplifier configurations. The series utilizes silicon epitaxial planar technology to achieve reliable performance under high-voltage conditions while maintaining low output capacitance.

Single Bipolar Transistors Replacement Considerations

The 2SA1514K is a confirmed substitute offering identical pinout and package specifications. Verify that the alternative part meets the same -120V breakdown and -50mA current ratings. Ensure the hFE characteristics align with the original circuit design requirements before implementation.