2SA1579U3HZGT106R

$0.49

Description：TRANS PNP 120V 0.05A UMT3
Series：-

SKU:3b3a1d7d0d91 Category: Single Bipolar Transistors Brand: Rohm Semiconductor

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Product introduction

2SA1579U3HZGT106R is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 120V 0.05A UMT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1579U3HZGT106R

Description：TRANS PNP 120V 0.05A UMT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 2mA, 6V
Power - Max：200 mW
Frequency - Transition：140MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：UMT3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1579U3HZGT106R

2SA1579U3HZGT106R

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SA1579U3HZGT106R is a PNP high-voltage amplifier transistor designed for surface-mount applications. It features a collector-emitter breakdown voltage of -120V and a maximum collector current of -50mA, housed in an SOT-323 (UMT3) package. The device is qualified under the AEC-Q101 standard for automotive reliability. Electrical characteristics include a DC current gain (hFE) ranging from 180 to 560, a transition frequency of 140MHz, and a power dissipation rating of 200mW at 25°C ambient temperature.

Single Bipolar Transistors Feature Summary

High breakdown voltage capability with a collector-emitter voltage rating of -120V.
Automotive-grade qualification compliant with the AEC-Q101 standard.
Designed as a complementary pair to the 2SC4102U3 HZG NPN transistor.

Single Bipolar Transistors Applications

High voltage amplifier circuits
General purpose amplification

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank required for the design, as the component is classified into R or S ranks based on gain thresholds. Confirm that the SOT-323 package dimensions align with the target PCB footprint. Ensure the operating junction temperature remains within the specified range during deployment.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage PNP transistor is needed in a compact surface-mount form factor. It serves as the direct complement to the 2SC4102U3 HZG. Consider the 200mW power dissipation limit and derating requirements for sealed environments. Verify the AEC-Q101 qualification meets automotive system requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1579 series of high-voltage amplifier transistors manufactured by ROHM Semiconductor. The series includes variants such as the 2SA1579FRA and 2SA1579T106S. These devices are engineered for robust performance in demanding electronic applications requiring high voltage handling in small packages.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SA1579U3HZG as the base model. No other specific substitute part numbers are documented in the provided source material.