Single Bipolar Transistors 2SA1588-Y,LF product image

2SA1588-Y,LF

$0.17
  • Description:TRANS PNP 30V 0.5A SC-70
  • Series:-

SKU:9bac6cb84a69 Category: Brand:

  
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2SA1588-Y,LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 30V 0.5A SC-70. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1588-Y,LF

  • Description:TRANS PNP 30V 0.5A SC-70
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 1V
  • Power - Max:100 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1588-Y,LF

2SA1588-Y,LF

Single Bipolar Transistors Overview

The Toshiba 2SA1588 is a silicon PNP epitaxial planar transistor utilizing the PCT process, designed for audio frequency low power amplifier applications, driver stage amplifiers, and switching circuits. It is AEC-Q101 qualified. Key electrical parameters include a collector-base voltage of -35 V, collector-emitter voltage of -30 V, emitter-base voltage of -5 V, and a maximum collector current of -500 mA. The device features an excellent hFE linearity with a minimum gain of 25 at VCE = -6 V and IC = -400 mA. Transition frequency is typically 200 MHz.

Single Bipolar Transistors Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • Excellent DC current gain (hFE) linearity across operating conditions
  • Complementary pairing available with the 2SC4118 NPN transistor

Single Bipolar Transistors Applications

  • Audio frequency low power amplifier applications
  • Driver stage amplifier applications
  • Switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm package type and thermal characteristics. Devices ending in LF(T are rated for a junction temperature up to 150°C when mounted on FR4 boards, while other suffixes are limited to 125°C. Confirm RoHS compatibility status directly with sales representatives as indicated in the datasheet restrictions.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high hFE linearity in low-power audio or driver stages. Ensure the application operates within the absolute maximum ratings, specifically noting the -30 V collector-emitter limit. Verify that the required DC current gain classification matches the design needs, as the Y suffix specifies a minimum hFE(2) of 40 compared to the standard O classification.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's discrete bipolar transistor portfolio manufactured using the epitaxial planar (PCT) process. It serves as a specialized replacement or enhancement for legacy audio amplifier circuits, offering improved linearity and automotive-grade qualification options compared to standard general-purpose transistors.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4118 as the complementary NPN counterpart. No other direct substitute part numbers are documented in the official specifications.

Single Bipolar Transistors FAQ

What is the difference between the LF(T) and non-LF(T) ordering suffixes?

The suffix determines the maximum junction temperature rating. Devices with the LF(T) suffix support a Tj of 150°C when mounted on an FR4 board, whereas devices without this suffix are limited to a Tj of 125°C.

How does the Y suffix affect the DC current gain?

The Y suffix indicates a higher binning classification for DC current gain. Specifically, it requires a minimum hFE(2) of 40 at VCE = -6 V and IC = -400 mA, compared to a minimum of 25 for the standard O classification.

2SA1588-Y,LF2SA1588-Y,LF
$0.17
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