2SA1693

Single Bipolar Transistors Overview

The Sanken 2SA1693 is a silicon PNP epitaxial planar transistor designed as the complement to the 2SC4466 NPN device. It features an absolute maximum collector-emitter voltage (VCEO) of -80 V and a continuous collector current (IC) rating of -6 A at a case temperature of 25°C. The component supports a maximum power dissipation of 60 W under identical thermal conditions, with a junction temperature range extending from -55°C to +150°C. Typical switching characteristics include a transition frequency (fT) of 20 MHz and a typical turn-on time of 0.18 ms.

Single Bipolar Transistors Feature Summary

• Designed specifically as a matched pair complement to the 2SC4466 NPN transistor for audio amplifier applications.

Single Bipolar Transistors Applications

• Audio amplification circuits
• General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank suffix (O, P, or Y) required for your design, as these indicate distinct DC current gain ranges. Confirm that the TO-3P (MT-100) package dimensions align with your heatsink and mounting constraints. Ensure the sourcing channel provides official Sanken documentation to validate the electrical parameters against the published datasheet specifications.

Single Bipolar Transistors Selection Notes

Select this component when a high-current PNP output stage is needed to complement an NPN driver in push-pull configurations. The -80 V breakdown voltage suits low-to-medium voltage audio rails. Consider the thermal management requirements carefully, as the 60 W rating is strictly dependent on maintaining the specified case temperature of 25°C using an infinite heatsink.

Single Bipolar Transistors Part Context

This transistor belongs to the Sanken complementary pair series, engineered for symmetry with the 2SC4466. It utilizes epitaxial planar technology to deliver stable performance in linear and switching modes. The MT-100 package provides robust mechanical stability and efficient heat transfer capabilities suitable for power audio stages.

Single Bipolar Transistors Replacement Considerations

Direct functional substitutes are not explicitly listed in the public datasheet. Designers should evaluate other PNP transistors with similar -80 V VCEO, -6 A IC, and TO-3P packaging, ensuring comparable hFE and fT characteristics to maintain circuit balance with the paired NPN device.

Single Bipolar Transistors FAQ

What are the available hFE gain ranks for the 2SA1693?

The datasheet specifies three hFE ranks: O (50 to 100), P (70 to 140), and Y (90 to 180).

What is the maximum power dissipation capability?

The maximum power dissipation is 60 W, provided the case temperature is maintained at 25°C with an infinite heatsink.