Single Bipolar Transistors 2SA1695 product image

2SA1695

$3.60
  • Description:TRANS PNP 140V 10A TO-3P
  • Series:-

SKU:5618f129bc42 Category: Brand:

  
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2SA1695 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is TRANS PNP 140V 10A TO-3P. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1695

  • Description:TRANS PNP 140V 10A TO-3P
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):140 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 500mA, 5A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 3A, 4V
  • Power - Max:100 W
  • Frequency - Transition:20MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3 Full Pack
  • Supplier Device Package:TO-3P
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1695

2SA1695

Single Bipolar Transistors Overview

The Sanken Electric 2SA1695 is a Silicon PNP Epitaxial Planar Transistor designed for audio and general-purpose applications. It serves as the complement to the 2SC4468 type. The device features a collector-base voltage (VCBO) of -140 V, a collector-emitter voltage (VCEO) of -140 V, and an emitter-base voltage (VEBO) of -6 V. Maximum continuous collector current (IC) is rated at -10 A, with a power dissipation (PC) of 100 W at a case temperature of 25°C. The junction temperature range extends from -55°C to +150°C. Electrical characteristics include a minimum DC current gain (hFE) of 50 and a typical transition frequency (fT) of 20 MHz.

Single Bipolar Transistors Feature Summary

  • High-voltage capability with -140 V collector-emitter breakdown rating suitable for demanding circuit environments.
  • Robust power handling with 100 W maximum power dissipation at 25°C case temperature.
  • Designed as a complementary pair to the 2SC4468 NPN transistor for matched performance in push-pull configurations.

Single Bipolar Transistors Applications

  • Audio amplifier circuits
  • General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank required for your design, as the datasheet defines ranks O (50-100), P (70-140), and Y (90-180). Confirm the package style matches the MT-100 (TO-3P) external dimensions provided. Ensure thermal management aligns with the derating curves for ambient temperatures exceeding 25°C. Cross-reference the complement part number 2SC4468 if designing balanced output stages.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage PNP transistor is needed to match the 2SC4468. Consider the TO-3P package size and mounting requirements for your chassis design. Evaluate the thermal resistance characteristics against your expected load currents to ensure operation within the safe operating area. Verify that the required hFE gain falls within the available rank specifications for your application's linearity needs.

Single Bipolar Transistors Part Context

This transistor belongs to Sanken Electric's lineup of silicon epitaxial planar transistors. It is specifically engineered to pair with the 2SC4468, ensuring symmetry in complementary metal-oxide-semiconductor or bipolar designs. The family focuses on delivering reliable performance in audio and general-purpose sectors where voltage ratings and power handling are critical parameters.

Single Bipolar Transistors Replacement Considerations

The 2SC4468 is the designated complementary NPN counterpart. No other direct substitute part numbers are documented in the official datasheet.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The absolute maximum continuous collector current (IC) is rated at -10 A.

How is the DC current gain categorized?

The hFE is divided into ranks: O (50 to 100), P (70 to 140), and Y (90 to 180).

What is the transition frequency of the device?

The typical transition frequency (fT) is 20 MHz under conditions of VCE = -12 V and IE = 0.5 A.

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