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2SA1705S-AN is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 50V 1A 3-NMP. Review the specifications below when checking this part for your BOM.
The onsemi 2SA1705S-AN is a PNP single NMP bipolar transistor rated for -50V collector-to-emitter voltage and -1A continuous collector current. It features an adoption of the FBET process to achieve fast switching speeds and low VCE(sat). The device operates with a junction temperature up to 150°C and is housed in an SC-71 package (NMP Taping) containing three terminals: Emitter, Collector, and Base.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets Pb Free requirements as stated in the datasheet. Ensure compatibility with the specified SC-71 package dimensions and terminal configuration before integration into the design.
Select this component for applications requiring a PNP transistor with high DC current gain at low currents. Consider the -50V breakdown rating and -1A current limit when designing circuits. Evaluate the thermal dissipation characteristics relative to the ambient operating temperature range.
This part belongs to the 2SA1705 series of PNP epitaxial planar silicon transistors manufactured by onsemi. It utilizes the FBET process to enhance performance metrics such as switching speed and saturation voltage compared to standard bipolar technologies.
The 2SA1705T-AN is a verified substitute within the same series, sharing identical electrical specifications and package type but potentially differing in shipping memo or tape configuration.
The maximum collector-to-emitter voltage (VCEO) is -50V.
The DC current gain (hFE) ranges from 140 to 400 depending on the rank classification at -100mA collector current.
It uses the NMP(Taping) package, which corresponds to the JEITA/JEDEC SC-71 outline.
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