2SA1709T-EPN-AN

Single Bipolar Transistors Overview

The onsemi 2SA1709T-EPN-AN is a PNP epitaxial planar silicon transistor designed for through-hole mounting in the NMP package. It features a maximum DC collector current of 2 A and a maximum collector-emitter voltage of 100 V. The device supports a maximum power dissipation of 1 W and operates at frequencies up to 120 MHz. Electrical limits include a collector-base voltage of -120 V and an emitter-base voltage of -6 V. The component measures 6.9 x 2.5 x 4.5 mm and withstands junction temperatures up to +150 °C.

Single Bipolar Transistors Feature Summary

• Utilizes MBIT process technology for high-speed switching performance
• Engineered with large current capacitance characteristics
• Designed for low collector-to-emitter saturation voltage

Single Bipolar Transistors Applications

• DC/DC converter circuits
• Relay driver stages
• Lamp drivers
• Motor drivers
• Strobe applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'EPN' against official manufacturer documentation, as standard listings often reference the base model 2SA1709S-AN. Confirm that the EPN designation does not alter the fundamental electrical parameters or package dimensions documented for the primary series. Ensure sourcing channels provide authentic datasheets matching the exact part number to avoid discrepancies in automotive or industrial qualification standards.

Single Bipolar Transistors Selection Notes

Select this component when a robust PNP transistor is required for medium-power switching applications within a through-hole form factor. The 100 V collector-emitter rating provides sufficient headroom for general-purpose control circuits. Consider the 1 W power dissipation limit and thermal management requirements during PCB layout. The NMP package offers a compact footprint suitable for space-constrained designs requiring reliable high-speed operation.

Single Bipolar Transistors Part Context

This transistor belongs to the 2SA1709 series from onsemi, characterized by adoption of MBIT processes for enhanced speed and efficiency. The series is engineered for applications demanding small physical size alongside high allowable power dissipation. These attributes support the miniaturization of consumer electronic devices while maintaining robust switching capabilities in power management and driver circuit topologies.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.