2SA1761,F(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1761,F(J is a silicon PNP epitaxial transistor manufactured using the PCT process. It features a maximum collector current of −3 A, a collector-emitter voltage rating of −50 V, and a collector-base voltage of −60 V. The device provides a minimum DC current gain (hFE) of 40 at −2 A and up to 400 at −100 mA. Key electrical characteristics include a maximum collector-emitter saturation voltage of −0.5 V and a typical transition frequency of 100 MHz. It operates within a junction temperature range up to 150 °C and dissipates up to 900 mW.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient power handling
• High-speed switching capability with short storage time
• Complementary pairing with the 2SC4604 NPN transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by checking lot number markings or contacting Toshiba sales representatives, as environmental compliance varies by production batch. Confirm package type matches JEDEC TO-92MOD specifications. Ensure design accounts for derating requirements under heavy loads to maintain reliability within absolute maximum ratings.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current drive capabilities combined with fast switching speeds. The low saturation voltage minimizes power loss during conduction. Verify that the complementary 2SC4604 is available if a push-pull configuration is required. Ensure thermal management supports the 900 mW dissipation limit at the intended operating temperature.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's line of silicon PNP epitaxial transistors utilizing the PCT process technology. It is designed specifically for general-purpose power applications where efficiency and speed are critical. The device complements the 2SC4604 NPN counterpart, facilitating balanced circuit designs in audio and switching stages.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4604 as the complementary NPN transistor. No other direct substitute part numbers are documented in the provided source material.