2SA1812T100Q

Single Bipolar Transistors Overview

The 2SA1812T100Q is a PNP silicon epitaxial planar transistor manufactured by ROHM Semiconductor. It features a maximum collector-emitter voltage of 400 V and a continuous collector current of 0.5 A. The device operates with a power dissipation of 1 W in an SMD/SMT configuration. Key electrical parameters include a DC current gain (hFE) ranging from 56 to 160, a collector-emitter saturation voltage of 3.0 V at specified test conditions, and a transition frequency (fT) of 80 MHz. The component supports a maximum operating temperature of +150°C and utilizes the MPT-3 package.

Single Bipolar Transistors Feature Summary

• High voltage capability rated for 400 V collector-emitter breakdown
• Robust thermal performance supporting operation up to +150°C junction temperature
• Designed for high-speed switching applications with defined transition frequency characteristics

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Power supply output stages
• Inductive load driving applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix T100Q against the official ROHM datasheet to confirm tape-and-reel packaging quantities and RoHS compliance status. Ensure the procurement documentation explicitly references the 400V rating and MPT-3 package dimensions to avoid substitution errors with similar low-voltage variants.

Single Bipolar Transistors Selection Notes

Select this component when circuit requirements demand a single PNP transistor capable of handling 400 V reverse bias and 0.5 A load current. The MPT-3 surface-mount package is suitable for space-constrained designs requiring high thermal stability. Verify that the required hFE range aligns with the 56–160 specification for the intended drive conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1812 series of medium-power PNP transistors designed for general-purpose high-voltage switching. It complements NPN counterparts in push-pull amplifier configurations. The device utilizes standard silicon epitaxial planar technology optimized for reliability in industrial and consumer electronics environments.

Single Bipolar Transistors Replacement Considerations

Consult the official ROHM cross-reference guide for verified substitutes. Direct replacements must match the 400 V / 0.5 A / 1 W specifications and MPT-3 footprint. Generic equivalents may lack the specific hFE distribution or thermal resistance characteristics documented for this series.