2SA1837(F,M)

Description：TRANS PNP 230V 1A TO-220NIS
Series：-

SKU:86864d5d4c30 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA1837(F,M) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 230V 1A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1837(F,M)

Description：TRANS PNP 230V 1A TO-220NIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：230 V
Vce Saturation (Max) @ Ib, Ic：1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 100mA, 5V
Power - Max：2 W
Frequency - Transition：70MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220NIS
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1837(F,M)

2SA1837(F,M)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1837 is a PNP silicon epitaxial transistor designed for power amplifier applications. It features a collector-emitter breakdown voltage of -230 V, a maximum collector current of -1 A, and a transition frequency of 70 MHz. The device operates within a junction temperature range of -55 to 150 °C and offers a DC current gain (hFE) between 100 and 320 at -100 mA. It is housed in a TO-220NIS package with an isolated case connection.

Single Bipolar Transistors Feature Summary

High transition frequency suitable for driver stage amplification
Complementary pairing with the 2SC4793 NPN transistor
Isolated collector case connection for effective thermal management

Single Bipolar Transistors Applications

Power amplifier circuits
Driver stage amplification

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributors, as lead-free availability varies by specific ordering suffix. Confirm that the component meets general electronics application standards and is not utilized in unintended high-reliability sectors such as medical or aerospace equipment without appropriate risk assessment.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage PNP switching or amplification up to 230 V. Ensure the design accommodates the specified 2 W dissipation limit at ambient conditions and utilizes adequate heatsinking for higher thermal loads. Verify compatibility with complementary NPN devices like the 2SC4793 for push-pull configurations.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of PNP bipolar junction transistors. It is specifically engineered for audio and RF power amplifier stages where high voltage handling and moderate current capacity are required. The device utilizes a silicon epitaxial process to achieve its specified electrical characteristics and reliability metrics.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4793 as the complementary NPN counterpart. No other direct substitute part numbers are documented in the provided source material.