2SA1837,HFEYHF(M

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1837 is a PNP silicon epitaxial transistor designed for power amplifier applications. It features a high transition frequency of 70 MHz typical, making it suitable for driver stage amplification. The device supports a collector current of -1 A and withstands collector-emitter voltages up to -230 V. Key electrical characteristics include a DC current gain ranging from 100 to 320 at -100 mA, and a collector-emitter saturation voltage of -1.5 V maximum at -500 mA. It is packaged in a TO-220NIS (2-10R1A) flange mount configuration with an isolated case.

Single Bipolar Transistors Feature Summary

• High transition frequency optimized for power amplifier and driver stage applications
• Complementary pairing capability with the 2SC4793 NPN transistor
• Robust voltage handling with -230 V collector-base and collector-emitter ratings

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributor, as historical data indicates variations between lead-free and lead-containing versions. Confirm the specific ordering suffix matches the required package finish and environmental certification. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and methods before finalizing component selection for long-term reliability assurance.

Single Bipolar Transistors Selection Notes

Select this component when designing PNP stages requiring high-speed switching characteristics alongside moderate power handling capabilities. Ensure the thermal design accommodates the specified junction temperature limits and power dissipation constraints under continuous operation. Verify that the complementary NPN device aligns with system symmetry requirements for push-pull configurations.

Single Bipolar Transistors Part Context

This component belongs to the family of bipolar junction transistors manufactured by Toshiba Semiconductor and Storage. It utilizes a silicon epitaxial process technology specifically engineered for audio and RF power amplification tasks. The device is housed in a through-hole TO-220NIS package, facilitating heat dissipation via the isolated metal tab for mounting onto external heatsinks.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4793 as the complementary NPN counterpart. No other direct substitute part numbers are documented in the provided source material.