2SA1837,NSEIKIF(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1837 is a silicon PNP epitaxial planar transistor designed for power amplifier applications. It features a high transition frequency of 70 MHz typical, making it suitable for driver stage amplification. The device is electrically complementary to the 2SC4793 NPN transistor. Key absolute maximum ratings include a collector-emitter voltage of -230 V, a collector current of -1 A, and a collector power dissipation of 2 W at an ambient temperature of 25°C, increasing to 20 W when mounted on a case at 25°C. The component utilizes a TO-220NIS (2-10R1A) flange mount package.

Single Bipolar Transistors Feature Summary

• High transition frequency optimized for RF and audio driver stages
• Complementary pairing with 2SC4793 for push-pull configurations
• Robust thermal performance with high power dissipation capability under case mounting conditions

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplifiers
• General electronics equipment including computers and domestic appliances

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized sales representatives, as historical data indicates variations across production lots. Confirm that the specific ordering suffix matches the required lead-free finish or packaging type. Ensure design reliability accounts for derating concepts outlined in the Toshiba Semiconductor Reliability Handbook, particularly regarding continuous heavy load operations.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a high-voltage PNP transistor with significant current handling capabilities. The 2SA1837 is specifically intended for use in general-purpose electronic applications rather than specialized safety-critical systems. Designers must ensure operation remains within the specified safe operating area curves and observe the absolute maximum ratings to prevent reliability degradation.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba Silicon PNP Epitaxial Type series, engineered for robust performance in amplifier applications. It is housed in a plastic/epoxy rectangular flange mount package, providing electrical isolation between the collector and the mounting surface. The device is manufactured using a planar process technology to ensure stable electrical characteristics and consistent gain performance across varying operating temperatures.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4793 as the complementary NPN counterpart for paired circuit designs. No other direct substitute part numbers are documented in the provided official specifications.