Single Bipolar Transistors 2SA1837,S1CSF(J product image

2SA1837,S1CSF(J

  • Description:TRANS PNP 230V 1A TO-220NIS
  • Series:-

SKU:9f9280900c72 Category: Brand:

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2SA1837,S1CSF(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 230V 1A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1837,S1CSF(J

  • Description:TRANS PNP 230V 1A TO-220NIS
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):230 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
  • Power - Max:2 W
  • Frequency - Transition:70MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1837,S1CSF(J

2SA1837,S1CSF(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1837 is a silicon PNP epitaxial planar transistor designed for power amplifier applications. It features a high transition frequency of 70 MHz typical, making it suitable for driver stage amplification. The device is electrically complementary to the 2SC4793 NPN counterpart. Key absolute maximum ratings include a collector-emitter voltage of -230 V, a collector current of -1 A, and a collector power dissipation of 20 W at Tc = 25°C. The component utilizes a TO-220NIS (2-10R1A) flange mount package with an isolated case connection.

Single Bipolar Transistors Feature Summary

  • High transition frequency optimized for driver stage amplifier applications
  • Complementary pairing with the 2SC4793 NPN transistor
  • Isolated case construction within a flange mount package

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributor, as historical data indicates variations between lead-free and lead-containing versions. Confirm the specific ordering suffix matches the required package finish and environmental certification. Ensure the design accounts for derating requirements specified in the Toshiba Semiconductor Reliability Handbook for continuous heavy load operations.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage PNP transistor with significant current handling capability is required for audio or RF power stages. The 230 V breakdown voltage supports high supply rails, while the 1 A continuous current rating suits moderate power loads. Consider the thermal management needs associated with the 20 W dissipation rating at the case temperature.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's discrete bipolar junction transistor lineup, specifically engineered for general electronics applications such as computer equipment, office machinery, and domestic appliances. It serves as a robust solution for linear amplification tasks where high voltage tolerance and defined gain characteristics are critical system parameters.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4793 as the complementary NPN transistor for paired configurations. No other direct substitute part numbers are documented in the provided source material.

2SA1837,S1CSF(J2SA1837,S1CSF(J

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