2SA1837,WNLF(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1837 is a silicon PNP epitaxial planar transistor designed for power amplifier applications. It features a high transition frequency of 70 MHz typical, making it suitable for driver stage amplification. The device provides a collector-emitter breakdown voltage of -230 V and supports a maximum collector current of -1 A. Key electrical characteristics include a DC current gain ranging from 100 to 320 at -100 mA, and a collector-emitter saturation voltage of -1.5 V maximum at -500 mA. It operates with a junction temperature up to 150 °C.

Single Bipolar Transistors Feature Summary

• High transition frequency optimized for driver stage amplifier applications
• Complementary pairing available with the 2SC4793 NPN transistor
• Robust collector-emitter breakdown voltage rating for power handling

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributor, as datasheet guidance indicates contacting sales representatives for specific product details regarding restricted substances. Confirm package marking requirements and lot traceability information prior to procurement to ensure alignment with project specifications and regulatory standards.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring a PNP transistor with high voltage tolerance and moderate switching speed. Ensure thermal management accommodates the specified power dissipation limits under both ambient and case temperature conditions. Verify that the required DC current gain falls within the documented minimum range for the intended operating current.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's lineup of silicon PNP epitaxial transistors intended for general electronics applications. It serves as a complementary pair to the 2SC4793 NPN transistor, facilitating push-pull configurations in audio and RF power stages. The device is housed in a TO-220NIS package, providing isolated mounting capabilities for heat dissipation.

Single Bipolar Transistors Replacement Considerations

The 2SC4793 is documented as the complementary NPN counterpart. No direct single-part replacements are listed in the provided documentation. Evaluate alternative PNP transistors based on matching voltage ratings, current capacity, and transition frequency if substitution is necessary.

Single Bipolar Transistors FAQ

What is the complementary transistor for the 2SA1837?

The 2SC4793 is documented as the complementary NPN transistor for the 2SA1837.

What is the typical transition frequency of the 2SA1837?

The typical transition frequency (fT) is 70 MHz, measured at VCE = -10 V and IC = -100 mA.

What is the maximum collector-emitter breakdown voltage?

The collector-emitter breakdown voltage (V(BR)CEO) is -230 V, tested at IC = -10 mA and IB = 0.