Single Bipolar Transistors 2SA1837,YHF(J product image

2SA1837,YHF(J

  • Description:TRANS PNP 230V 1A TO-220NIS
  • Series:-

SKU:eeaf803011c0 Category: Brand:

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2SA1837,YHF(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 230V 1A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1837,YHF(J

  • Description:TRANS PNP 230V 1A TO-220NIS
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):230 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
  • Power - Max:2 W
  • Frequency - Transition:70MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1837,YHF(J

2SA1837,YHF(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1837 is a silicon PNP epitaxial planar transistor designed for power amplifier and driver stage applications. It features a high transition frequency of 70 MHz typical. The device supports a collector current of -1 A and withstands collector-emitter voltages up to -230 V. Power dissipation reaches 20 W at a case temperature of 25°C, with a maximum junction temperature of 150°C. It is packaged in the TO-220NIS (2-10R1A) format.

Single Bipolar Transistors Feature Summary

  • High transition frequency suitable for RF and audio driver stages
  • Complementary pairing with the 2SC4793 NPN transistor
  • Robust power handling capabilities for amplifier circuits

Single Bipolar Transistors Applications

  • Power amplifier applications
  • Driver stage amplifier applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributor, as historical data indicates variations across packaging types. Confirm the specific ordering suffix matches the required lead-free finish. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and methods before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP transistor with high voltage tolerance and moderate power dissipation. Ensure the thermal management system maintains the case temperature within limits to support the 20 W dissipation rating. Verify that the complementary 2SC4793 is available if a push-pull configuration is intended for the amplifier design.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba Silicon PNP Epitaxial Type series. It is specifically engineered for general electronics applications such as computer equipment, office machinery, and domestic appliances. The device utilizes a plastic/epoxy flange mount package with an isolated collector connection.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4793 as the complementary NPN counterpart. No other direct substitute part numbers are documented in the provided source material.

2SA1837,YHF(J2SA1837,YHF(J

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