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2SA1837,YHF(M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 230V 1A TO-220NIS. Review the specifications below when checking this part for your BOM.
The Toshiba Semiconductor and Storage 2SA1837 is a silicon PNP epitaxial planar transistor designed for power amplifier and driver stage applications. It features a high transition frequency of 70 MHz typical. The device supports a collector-emitter voltage of -230 V and a continuous collector current of -1 A. Power dissipation reaches 20 W at a case temperature of 25°C, with a maximum junction temperature of 150°C. It is packaged in the TO-220NIS (2-10R1A) format.
Verify RoHS compliance status directly with the manufacturer or authorized distributor, as legacy variants may differ. Confirm the specific ordering suffix matches the required lead-free finish. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines to ensure long-term operational stability under thermal stress.
Select this component when designing complementary push-pull output stages requiring a PNP counterpart to the 2SC4793. Ensure the application operates within the specified safe operating area curves. Verify that the thermal management design accommodates the 20 W dissipation rating at the intended case temperature.
This component belongs to the Toshiba 2SA series of PNP power transistors. It utilizes an epitaxial planar process optimized for high-frequency performance. The device is commonly paired with its NPN complement for balanced audio and RF power amplification designs.
The official complementary part number is 2SC4793. Verify pinout compatibility and electrical symmetry before substitution in existing circuit layouts.
The 2SA1837 is officially complementary to the 2SC4793.
The absolute maximum collector-emitter voltage (VCEO) is -230 V.
It uses the TO-220NIS package, also designated as JEITA 2-10R1A.
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