Single Bipolar Transistors 2SA1837,YHF(M product image

2SA1837,YHF(M

  • Description:TRANS PNP 230V 1A TO-220NIS
  • Series:-

SKU:7d1ecd0b59fc Category: Brand:

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2SA1837,YHF(M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 230V 1A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1837,YHF(M

  • Description:TRANS PNP 230V 1A TO-220NIS
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):230 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
  • Power - Max:2 W
  • Frequency - Transition:70MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1837,YHF(M

2SA1837,YHF(M

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1837 is a silicon PNP epitaxial planar transistor designed for power amplifier and driver stage applications. It features a high transition frequency of 70 MHz typical. The device supports a collector-emitter voltage of -230 V and a continuous collector current of -1 A. Power dissipation reaches 20 W at a case temperature of 25°C, with a maximum junction temperature of 150°C. It is packaged in the TO-220NIS (2-10R1A) format.

Single Bipolar Transistors Feature Summary

  • High transition frequency suitable for RF amplification
  • Complementary pairing with the 2SC4793 NPN transistor
  • Robust power handling capabilities for driver stages

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributor, as legacy variants may differ. Confirm the specific ordering suffix matches the required lead-free finish. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines to ensure long-term operational stability under thermal stress.

Single Bipolar Transistors Selection Notes

Select this component when designing complementary push-pull output stages requiring a PNP counterpart to the 2SC4793. Ensure the application operates within the specified safe operating area curves. Verify that the thermal management design accommodates the 20 W dissipation rating at the intended case temperature.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SA series of PNP power transistors. It utilizes an epitaxial planar process optimized for high-frequency performance. The device is commonly paired with its NPN complement for balanced audio and RF power amplification designs.

Single Bipolar Transistors Replacement Considerations

The official complementary part number is 2SC4793. Verify pinout compatibility and electrical symmetry before substitution in existing circuit layouts.

Single Bipolar Transistors FAQ

What is the complementary transistor for the 2SA1837?

The 2SA1837 is officially complementary to the 2SC4793.

What is the maximum collector-emitter voltage rating?

The absolute maximum collector-emitter voltage (VCEO) is -230 V.

What package type does this transistor use?

It uses the TO-220NIS package, also designated as JEITA 2-10R1A.

2SA1837,YHF(M2SA1837,YHF(M

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