Single Bipolar Transistors 2SA1869-Y,MTSAQ(J product image

2SA1869-Y,MTSAQ(J

  • Description:TRANS PNP 50V 3A TO-220NIS
  • Series:-

SKU:cb3088237e5f Category: Brand:

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2SA1869-Y,MTSAQ(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 3A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1869-Y,MTSAQ(J

  • Description:TRANS PNP 50V 3A TO-220NIS
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:10 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1869-Y,MTSAQ(J

2SA1869-Y,MTSAQ(J

Single Bipolar Transistors Overview

The Toshiba 2SA1869-Y,MTSAQ(J) is a silicon PNP epitaxial transistor designed for power amplifier applications. It features a collector-emitter voltage of -50 V and a continuous collector current of -3 A. The device offers a DC current gain (hFE) range of 120 to 240 at -0.5 A and transitions at 100 MHz. Power dissipation reaches 10 W at 25°C case temperature. It utilizes the JEITA SC-67 package.

Single Bipolar Transistors Feature Summary

  • Good linearity of hFE
  • Complementary to 2SC4935

Single Bipolar Transistors Applications

  • Power Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix MTSAQ(J) against official Toshiba documentation to confirm exact marking and packaging details. Ensure compliance with general electronics application guidelines and avoid unintended usage scenarios such as medical or transportation instruments. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and handling precautions before integration.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high linearity in power amplification stages. The complementary nature to the 2SC4935 NPN transistor facilitates balanced push-pull circuit configurations. Evaluate thermal management requirements carefully, as power dissipation ratings are specified at a 25°C case temperature rather than ambient conditions.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA1869 series of silicon PNP epitaxial transistors manufactured using the PCT process. The series is engineered specifically for power amplifier applications, offering robust performance characteristics suitable for audio and RF signal processing tasks within consumer and industrial electronic equipment.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SC4935 as the complementary NPN transistor. Verify pinout compatibility and electrical parameters when substituting with other PNP power transistors from different manufacturers.

2SA1869-Y,MTSAQ(J2SA1869-Y,MTSAQ(J

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