2SA1908

Single Bipolar Transistors Overview

The Sanken Electric USA Inc. 2SA1908 is a silicon PNP epitaxial planar transistor designed for audio and general-purpose applications, serving as the complement to the 2SC5100 NPN type. It features a collector-base voltage (VCBO) of -120V, a collector-emitter voltage (VCEO) of -120V, and an emitter-base voltage (VEBO) of -6V. The device supports a continuous collector current (IC) of -8A and dissipates up to 75W at a case temperature of 25°C. Key electrical characteristics include a minimum DC current gain (hFE) of 50 at IC=-3A and VCE=-4V, with typical switching times of ton=0.14ms and tf=0.21ms. It operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Complements the 2SC5100 NPN transistor in push-pull configurations
• High power dissipation capability suitable for audio output stages
• Robust safe operating area for single pulse operations

Single Bipolar Transistors Applications

• Audio amplifier circuits
• General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (O, P, or Y) required for your design, as gain varies by bin. Confirm thermal management requirements, as the 75W rating applies only at Tc=25°C; derating is necessary for ambient temperature operation. Ensure the TO-3PF (FM100) package dimensions match your PCB footprint and heatsinking constraints before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high-current PNP transistor is needed to pair with the 2SC5100. Consider the -120V breakdown voltage and -8A current capacity against circuit demands. Evaluate the thermal resistance characteristics if operating without a dedicated heatsink, as natural cooling limits power dissipation significantly compared to infinite heatsink conditions.

Single Bipolar Transistors Part Context

This component belongs to Sanken's lineup of silicon epitaxial planar transistors optimized for power handling. It utilizes a triple-diffused planar structure common in their audio-grade discrete semiconductors. The FM100 (TO-3PF) package provides a robust mechanical interface for high-power thermal management, distinguishing it from smaller signal transistor packages.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC5100 as its complementary counterpart. No other direct substitute part numbers are documented in the provided source material.